Electron microscopy
 
SIMS Application of IC Failure Analysis
- Practical Electron Microscopy and Database -
- An Online Book -
Microanalysis | EM Book                                                                                   http://www.globalsino.com/EM/        


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Figure 1251 shows SIMS profiles of failed and good MOS structures. The root cause of the device failure is due to gate oxide breakdown, induced by Cu (copper) contamination.

SIMS profiles of failed (a) and good (b) MOS structures

Figure 1251. SIMS profiles of failed (a) and good (b) MOS structures. [1]

 

 

 

 

 

 

 

 

 

 

[1] Kin Man Yu, http://www6.cityu.edu.hk.

 

 

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