TiSix (titanium silicide) and its Failure in IC devices - Practical Electron Microscopy and Database - - An Online Book - |
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Microanalysis | EM Book https://www.globalsino.com/EM/ | |||||||||||||||||||||||||||||||||||
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Titanium silicide (TiSix) is of significant importance in the semiconductor industry in 1.0 - 0.25 µm technology due to its characteristics of low resistivity, good thermal stability and self-alignment with silicon [1]. However, the disadvantage of titanium silicide is the transformation from the high resistivity orthorhombic body-centered (C49) state to the thermodynamically favored orthorhombic face-centered (C54) state at small linewidth. Table 1291. Properties of TiSi2 materials.
Titanium silicides, in general, induce higher compressive strain than cobalt silicides.[2] The induced strain can be a source for dislocation nucleation in silicon if the silicidations are carried out at high temperatures.[3]
[1] Steven H. Voldman, ESD: Physics and Devices, 2004.
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