This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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TiSi_x is a more general form of titanium silicide materials. Ti₅Si₃ is a material suitable for high temperature applications [1, 2]. It has combined properties of a high melting point (2403 K), a low density (4.32 g/cm³), high hardness (11.3 GPa), and a relatively high Young’s modulus (225 GPa) [1].

Ti₅Si₃ has complex hexagonal structure (D8₈) with lattice parameters of a = 0.514 nm and c = 0.744 nm, and has 16 atoms per unit cell.

Under some conditions, prior to the disilicide formation [3-5], the initial crystalline phase formed during the Ti–Si interaction is a metal-rich silicide (either Ti₅Si₃ or Ti₅Si₄). Then, the disilicides form at the expense of the metal-rich silicide at higher annealing temperature.

[1] Meschter PJ, Schwartz DS. Silicide-matrix materials for hightemperature applications. J Organomet Chem 1989;52–5.
[2] Murarka SP, Fraser DB. Thin film interaction between titanium and polycrystalline silicon. J Appl Phys 1980;51(1):342–9.
[3] S.-L. Zhang, C. Lavoie, C. Cabral, J.M.E. Harper, F.M. d’Heurle, J. Jordan-Sweet, J. Appl. Phys. 85 (1999) 2617.
[4] L.A. Clevenger, C. Cabral, R.A. Roy, C. Lavoie, J. Jordan- Sweet, S. Brauer, G. Morales, K.F. Ludwig, G.B. Stephenson, Thin Solid Films 289 (1996) 220.
[5] F. M. d’Heurle, J. Mater. Res. 3 (1988) 167.