This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
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In integrated circuits (ICs), conductive lines provide electrical interconnection among different parts of the ICs, devices, and the outside. The main applications of metallization are classified by gate, contact, and interconnection. Polysilicon and silicides are commonly applied as gates and interconnects in MOS devices. Aluminum, copper, tungsten, silver, titanium, platinum, gold, and palladium are used as these types of contacts, connections, and/or interconnection to external components.
Table 2049a shows the summary of 2003 Roadmap, listing the node, gate length, equivalent oxide thickness of high power (CPU) and low standby power devices (mobile), gate oxide material, and gate electrode material.
Table 2049a. Summary of 2003 Roadmap.
Year |
2001 |
2003 |
2005 |
2007 |
2009 |
2012 |
2016 |
2018 |
Node |
130 |
100 |
80 |
65 |
45 |
32 |
22 |
18 |
ASIC 1/2 pitch |
150 |
107 |
80 |
65 |
45 |
32 |
25 |
18 |
Physical gate
length |
65 |
45 |
32 |
25 |
20 |
13 |
9 |
7 |
Tox hi power |
1.5 |
1.3 |
1.1 |
0.9 |
0.8 |
0.6 |
0.5 |
0.5 |
Tox lo power |
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2.2 |
2.1 |
1.6 |
1.4 |
1.1 |
1.0 |
0.9 |
Gate oxide |
Oxynitride |
HfOx; Si,N |
LaAlO3 |
Gate metal |
Poly Si |
Metal gate, e.g. TaSiNx |
Table 2049b. Metallization selections in ICs.
Application |
Selection |
Gates, interconnection, and
contacts |
Polysilicon, refractory metal silicides (e.g. MoSix, TaSix, WSix, and TiSix), nitrides,aluminum, copper, and/or refractory metals. |
Diffusion barrier layer |
Ti, TiN, Ta, TaN, Ti-W alloy, and/or silicides |
Top level |
Aluminum, and/or copper |
Metallization
on silicon |
Silicides, tungsten, aluminum, and/or copper |
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