ICs in Mobile Devices
- Practical Electron Microscopy and Database -
- An Online Book -

http://www.globalsino.com/EM/  



 
This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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Table 2055 shows the summary of 2003 Roadmap, listing the node, gate length, equivalent oxide thickness of high power (CPU) and low standby power devices (mobile), gate oxide material, and gate electrode material.

Table 2055. Summary of 2003 Roadmap.

Year
2001
2003
2005
2007
2009
2012
2016
2018
Node
130
100
80
65
45
32
22
18
ASIC 1/2 pitch
150
107
80
65
45
32
25
18
Physical gate
length
65
45
32
25
20
13
9
7
Tox hi power
1.5
1.3
1.1
0.9
0.8
0.6
0.5
0.5
Tox lo power
2.2
2.1
1.6
1.4
1.1
1.0
0.9
Gate oxide
Oxynitride
HfOx; Si,N
LaAlO3
Gate metal
Poly Si
Metal gate, e.g. TaSiNx

 

 

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