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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
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Table 2425. Wafer cleaning chemistry in IC fabrications.
Chemical component |
Purpose |
Method |
Ammonium fluorosilicate
[(NH4)2SiF6] |
Remove native oxide on Si substrate [1, 2] |
Chemical dry-clean (CDC) |
The chemical dry-cleaning (CDC) on Si substrates employs the byproduct [(NH4)2SiF6] with the following chemical reaction:
SiO2(s) + 2NF3(plasma) + NH3(plasma) |
→ |
2H2O(g) + 2N2(g) + 2(NH4)2SiF6(s) |
(NH4)2SiF6(s) |
→ |
(NH4)2SiF6(g) |
≥100° |
[1] R. Yang, N. Su, P. Bonfanti, J. Nie, and J. Ning, “Advanced in situ
pre-Ni silicide (Siconi) cleaning at 65 nm to resolve defects in NiSix
modules,” J. Vac. Sci. Technol. B, vol. 28, no. 1, pp. 56–61, Jan.
2010.
[2] T. Yamaguchi, K. Kashihara, S. Kudo, T. Tsutsumi, T. Okudaira, K.
Maekawa, Y. Hirose, K. Asai, and M. Yoneda, “Characterizations of
NiSi2-whisker defects in n-channel metal-oxide-semiconductor fieldeffect
transistors with <110> Channel on Si(100),” Japan. J. Appl. Phys.,
vol. 49, no. 12, pp. 126–503, Dec. 2010.
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