Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix
| In FIB processes, the bombardment of positively charged Ga+ ions to the surface of an insulator can cause sample charging. The high energy ion bombardment in the sample can accumulate into several thousand volts of charge which can result in large craters and local melting due to electrostatic discharge. Fortunately, this charging can be reduced by the following methods:
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