Table 996. Silicide processes.
Silicides |
Processes |
Advantages/disadvantages |
Co2Si |
|
|
CoSi |
|
|
|
|
|
CoSi/Co2Si |
|
|
Cr3Si |
|
|
CrSi2 (C11b) |
|
|
CrSi2 (C40) |
|
|
Cu3Si |
|
|
α-FeSi2 |
|
|
β-FeSi2 |
|
|
HfSi |
|
|
IrSi |
|
|
MnSi |
|
|
MnSi2-x |
|
|
MnSi2 |
|
|
Mn11Si19 |
|
|
Mo5Si3 |
|
|
MoSi2 (C11b) |
|
|
MoSi2 (C40) |
|
|
|
|
|
Nb/Nb5Si3 |
|
|
Nb5Si3 (D8b) |
|
|
NbSi2 |
|
|
NbSi2 (C11b) |
|
|
NbSi3 |
|
|
Ni2Si |
|
|
NiSi |
|
|
NiSi2 |
|
Usually favors the appearance of the more stable (111) facet on the (100) Si plane and causes rough mor
phology at silicide/Si interface. [2]
|
| Nickel silicide |
Pulsed laser annealing for nMOSFET
|
Uniform, high tensile stress and low silicide/Si interfacial resistance; Si-rich
NiSix compounds to improve the silicide/Si interface regularity and avoid (111) NiSi2
facet formed on the (100) Si plane. [1]
A rough silicide/Si interface creates the possibility of junction spiking and limits the thickness to
which the silicide layer can be grown. [1] |
Pd2Si |
|
|
PtSi |
|
|
ReSi2 (C11b) |
|
|
RhSi |
|
|
Ta5Si3 (C40) |
|
|
Ta5Si3 |
|
|
|
|
|
Ti5Si3 (D8m) |
|
|
Ti5Si3 |
|
|
Ti/Ti5Si3 |
|
|
TiSi2 (C49) |
|
|
|
|
|
V3Si |
|
|
VSi2 (C11b) |
|
|
VSi2(C40) |
|
|
W5Si3 |
|
|
WSi2 (C40) |
|
|
|
|
|
ZrSi2 |
|
|
[1] Hou-Yu Chen, Chia-Yi Lin, Min-Cheng Chen, Chien-Chao Huang, and Chao-Hsin Chien, Nickel Silicide Formation using Pulsed Laser Annealing for nMOSFET Performance Improvement, Journal of The Electrochemical Society, 158 (8) H840-H845 (2011).
[2] K. C. R. Chiu, J. M. Poate, J. E. Rowe, T. T. Sheng, and A. G. Cull, Appl. Phys.
Lett., 38, 988 (1981).
|
