Chapter C |
|
|
C11b (body centered tetragonal) |
C40 structure |
C54 structure |
Comparison between hexagonal and C54 |
C49-C54 titanium disilicide (TiSi2) |
C-planes of sapphire crystal |
c/a ratios in hcp structures |
|
Calibration |
|
Calibration of magnification and scale bar in TEM |
|
EDS energy calibration |
|
Calibration of electron diffraction patterns |
|
Calibration of EELS profile by K edge of amorphous carbon (π* peak) |
Cadmium (Cd) |
|
CdSe |
|
EELS of Cadmium (Cd) |
Calcium (Ca) |
|
EDS measurement of calcium (Ca) |
|
EELS measurement of calcium (Ca) |
|
Calcium fluoride (CaF2) |
|
|
|
Ca1-xSrxTiO3 |
|
CaTiO3 |
|
CaO |
|
Ca3Al2Si3O12 |
|
Castaing-Henry (C-H) magnetic prism/electrostatic mirror |
Cat’s eye (beam shape) |
|
|
Misfit layer chalcogenides |
|
|
|
Challenges/difficulties: advanced EM-related measurements and analyses |
|
Cameras |
|
Charge-coupled device (CCD) for EELS & EFTEM |
|
Detective quantum efficiency (DQE) in EELS and imaging systems |
|
Dew point |
|
Dynamic range |
|
Gatan hardware, camera, & software |
|
Electron-to-Counts conversion efficiency |
|
Phosphor used in electron spectrum detectors/cameras |
|
Nyquist frequency |
|
Point-spread function of camera |
|
Photodiode array (PDA) for EELS |
|
Gatan MultiScan camera complete KIT |
|
Spatial of camera |
|
Photo-diode array (PDA) detectors |
|
Gatan Orius SC200D CCD camera |
|
Gatan Bioscan Camera |
|
|
Camera length |
|
Camera length in EBSD |
|
Projector lenses & camera lengths/camera constant in TEM/STEMs |
|
Magnification versus camera length |
|
(Effective) camera length in TEM |
|
Camera length and its effects on various measurements |
|
|
|
|
PVC of capacitors |
|
Capacitive coupling voltage contrast (CCVC) |
|
|
Carbon analysis using analytical techniques |
|
EDS measurement of carbon |
|
EELS of carbon (C) |
|
Calibration of EELS profile by K edge of amorphous carbon (π* peak) |
|
Electron diffraction patterns and FFT of HRTEM of amorphous carbon |
|
EM images of amorphous carbon |
|
Raman spectrum of carbon |
|
X-ray absorption induced by carbon contamination |
|
TEM observation of carbon nanotubes |
|
Hydrocarbon (HC) and carbon contamination of EM specimens |
|
Carbon contamination effects on EELS measurements & its reduction |
|
Carbon deposition by FIB |
|
Carbon-materials bonds |
|
(Holey) carbon supports for EM analysis |
|
Carbon coating on TEM samples – to avoid charging effect |
|
EDS-TEM specimen holders |
|
|
|
|
|
Carbides |
|
CF4 gas |
|
C-doped Fe/carbon in iron |
|
Copper (Cu) with dielectric diffusion barrier SiCxNy |
|
Diamond |
|
Boron carbide |
|
Carbon monoxide (CO) |
|
SiC |
|
C-based metallic-glass alloys |
|
Carbon-coated aluminum |
|
|
|
|
|
Carbon deposition/contamination in SOFCs |
|
Carbon contamination in IC devices |
Catalysts |
|
TEM analysis of catalysts |
|
Catalytic converter |
|
CASTEP |
|
Cathode in electron gun in EMs |
Cathode (positive) & anode (negative) electrode materials for lithium batteries |
|
|
Electron relaxation and light/cathodoluminescence |
|
In situ observation in cathodoluminescence imaging |
|
Cathodoluminescence imaging |
|
Resolution of cathodoluminescence technique |
|
Cathodoluminescence system and their troubleshooting |
|
Comparison between Cathodoluminescence and EELS |
|
|
Correction of astigmatism of objective lens using caustic image |
|
Coma-free alignment in TEM based on caustic image |
|
Correction of astigmatism of condenser lens using caustic image
|
|
|
|
CaTiO3 |
Cavity/hole/bubble/void in materials |
Center of inversion (center of symmetry, i) |
|
Centering in EMs |
|
Voltage centering in TEM |
|
Current centering in TEM |
|
Centrosymmetric space groups & Laue groups |
|
Ceramics |
|
TEM analysis of ceramics |
|
|
|
|
EELS of Cerium (Ce) |
|
EDS measurement of cerium (Ce) |
|
CeF3 |
|
Gadolinium doped ceria oxide (GDC) |
|
Ce-based metallic-glass alloys |
|
Ce2O3 and CeO2 |
|
Cu-CeO-YSZ |
|
|
Cesium (Cs) |
|
CsCl & cesium chloride structure |
|
|
|
CFM56 engines |
|
Channel in EELS |
|
Channels: Gain variations in energy filter, CCDs & EELS channels |
|
Gain normalization for EELS measurement |
Channeling |
|
Electron channeling in EM specimens |
|
Channelling/diffraction enhanced X-ray emission in EDS measurements |
|
Electron channeling effects in EELS measurements |
|
Electron channeling
in HAADF STEM imaging |
|
Ion channeling on FIB measurements |
|
Strain/stress analysis with STEM (channeling/dechanneling) |
Charge |
|
Valence state controlled by charge neutrality |
|
Charge-flipping algorithm |
|
Properties of accelerated charged particles |
|
Instability of EEL spectra or images due to GIF charging |
|
Spacecraft charging |
|
Techniques used to detect/measure charges in EM samples |
|
|
Full-frame transfer (FT) CCD |
|
Interline transfer (IT) CCD |
|
Super pixel/binning/binned pixel in CCD |
|
CCD for EELS & EFTEM |
|
Binning in CCD |
|
Blooming/smearing in CCD |
|
Streaks formed by smearing/blooming in CCD camera |
|
Noise reduction by binning in CCD |
|
Binning versus saturation/exposure time in CCD camera |
|
Slow scan charge-coupled device (SSCCD) camera |
|
Scintillator-coupled CCD camera |
|
Operating temperature of CCD cameras |
|
Characteristic inelastic scattering angle for EELS |
Characteristic X-rays |
|
|
Charging of electrically isolated materials (insulator) in SEM and TEM samples |
|
Charge-induced SE (secondary electron) contrast in SEM |
|
Positive charging in SEM observation |
|
Negative charging in SEM observation |
|
Instability of TEM imaging due to specimen charging |
|
Carbon coating on TEM samples – to avoid charging effect |
|
Ionic migration induced by charging effect in SEM |
|
Coating to avoid charging in SEM samples |
Charging induced elemental migration in EM samples |
|
Charging of electrically isolated materials in SEM and TEM samples |
|
Electromigration |
|
Electrostatic force |
|
Electron wind force |
|
Ionic migration induced by charging effect in SEM |
|
Ionic migration due to sample surface charging |
Charging in electron microscopes (EMs) |
|
Discharging and charging in electron guns |
|
|
Charging in FIB process |
|
Sample charging in FIB processes |
|
Charging enhanced electron/ion-beam-induced-deposition |
Charged particle |
|
Coulomb interaction between heavy charged particle and orbital electron |
|
Hard collision between charged particle and atom |
|
Soft collision between charged particle and atom |
|
Energy transfer from charged particle to matter |
|
Interaction between incident charged particle and matter |
|
Radius of path of electrons/charged particles in a magnetic field |
|
Rutherford (elastic) scattering |
|
Correction of chromatic aberration in charged particle accelerators with time-varying fields |
|
Wave properties of charged particles |
|
|
|
Charged defects and deep level traps in materials |
Chaotic phases/structures |
Chemical analysis |
|
Chemical analysis by TEM/SEM |
|
Analysis of chemical-state/structure |
|
Dopant-selective etching/staining in IC analysis |
|
|
|
|
Chemical bond length |
|
Bonding and antibonding |
|
Bond overlap population diagram (BOPD) |
|
Elemental bonding analysis using EELS |
|
Bonding disorder in materials |
|
Bonding energies and melting temperatures of substances |
|
Valence electron energy modified by bond formation |
|
Core electron energy modified by bond formation |
|
Chemical and physical constants, and unit conversion |
Chemical ordering in crystals |
Chemical processes |
|
In-situ TEM observations of chemical processes |
|
Chemical changes induced by ion beam irradiation |
|
TEM specimen preparation by chemical etching |
|
Isotropic wet-etching |
|
Anisotropic wet-etching |
|
|
|
|
Chemical shift detection of elements by EDS |
|
Chemical shift detection of elements by EELS and EFTEM |
|
|
Metalorganic chemical vapor deposition (MOCVD) |
|
FIB induced deposition |
|
Cherenkov/Cerenkov/Čerenkov radiation |
Chevron defect |
Chimney-ladder structures |
Chiral space groups |
|
|
EDS measurement of chlorine (Cl) |
|
EELS of chlorine (Cl) |
|
Chlorine-induced corrosion/contamination in ICs |
|
BCl3 |
|
CsCl |
|
TiCl4-Ether complex |
|
Cl2 |
|
HCl |
|
AlCl3 |
|
Sodium chloride (NaCl) |
|
ICl |
|
|
|
|
Effects of chromatic aberration on EELS |
|
Resolution limit due to chromatic aberration (Cc) |
|
Dependence of Cs and Cc aberrations on accelerating voltage of beam |
|
Achromatic lenses/achromats |
|
Standard deviation of the Gaussian distribution of defocus due to the chromatic aberration |
|
Spatial resolution of EFTEM mapping affected by chromatic aberration |
|
Beam spreading in STEM caused by chromatic aberration |
|
Chromatic aberration affected by beam alignments |
|
Defocus induced by chromatic aberration/energy deviation in electrons |
|
Chromatic aberration of objective lens |
|
|
Cc correction in SEM |
|
Interaction between chromatic and spherical aberration corrections |
|
Effect of chromatic aberration on fine structure analysis using EFTEM |
|
Effect of chromatic aberration on spatial resolution in EMs |
|
Correction of chromatic aberration in charged particle accelerators with time-varying fields |
|
Quadrupole for chromatic aberration (Cc) corrections |
|
Hexapole for chromatic aberration (Cc) corrections |
|
Correction of electron optical aberrations in EFTEM |
|
|
EELS measurement of chromium (Cr) |
|
EDS measurement of chromium (Cr) |
|
Cr2O3 |
|
|
|
Misfit layer chalcogenides: (AX)1+δ(BX2)n (A = rare earth/Sn/Pb/Sb/Bi; B = Ti/V/Cr/Nb/Ta; X = S/Se) |
|
La1.2CrS3.2 |
Cleaning |
|
Wafer cleaning |
|
Plasma cleaning and plasma cleaners used for EM sample cleaning |
|
Cleavage plane of crystals |
Circle of least confusion |
Circular functions in EMs |
|
|
|
Cliff-Lorimer ratio method for EDS |
|
Cliff-Lorimer sensitivity factors in EDS |
|
EDS quantification with k-factors (Cliff-Lorimer factors) |
|
|
|
Clock time in EDS measurements |
Close packed (most densely packed) planes and directions in crystals |
Clustering |
|
Clustering of vacancies into dislocation loops |
|
|
CMOS |
|
Scaling of CMOS-FET |
|
CMOS failure mechanisms |
|
Local oxidation of silicon (LOCOS) |
|
CMOS failure mechanisms in FinFET technology |
|
Shallow trench isolation (STI) failure mechanisms of CMOS |
|
ESD (electrostatic discharge) failure of CMOS technology |
|
CMP scratches |
Cockcroft–Walton voltage-multiplier circuit generator |
Coarsening/Ostwald ripening of dislocation loops |
|
Coating |
|
Coating of TEM specimen to reduce beam damage & sputtering |
|
Coating materials for cutting tools |
|
|
EELS Measurement of Cobalt (Co) |
|
Co-X equilibrium phase diagrams |
|
Co-based metallic-glass alloys |
|
EDS measurements of cobalt (Co) |
|
|
Diffraction patterns of cobalt disilicide (CoSi2) and cobalt silicide (CoSi) |
|
Mapping of CoSi and CoSi2 Distributions |
|
Comparison between nickel silicides and cobalt silicides |
|
|
|
|
Failure due to cobalt silicide stringers/spikes |
|
Failure of cobalt silicidation in ICs |
|
Void-formation-induced failure in cobalt silicidation in ICs |
|
|
|
|
Coherence between diffracted electron beams in TEMs |
|
Low angle elastic scattering and coherence in TEM |
|
Coherence of electron beam shown by STEM/Ronchigram |
|
Partial coherence of electron source |
|
Coherent beam current in EMs |
|
Spatial coherence/incoherence of electron source |
|
Electron beam coherence vs HRTEM |
|
Temporal coherence/incoherence of electron source |
|
Coherence length of electrons |
|
Coherent aberrations |
|
Coherent illumination in EMs |
|
Beam convergence angle/coherence effects on CTF patterns |
|
Electron beam convergence angle and coherence |
|
Effects of illumination coherence on spatial resolution in TEMs |
|
Optimum convergence semi-angle in STEM |
|
|
Cincidence site lattice (CSL) boundary |
|
Incoherent coincidence site lattice (CSL) boundary |
|
Σ(Sigma numbers): Coincident site lattice (CSL) of twin and grain boundaries |
|
Coefficients |
Coercive field in ferroelectrics |
(Cold cathode) ionization gauge/Penning gauge |
Cold field emission electron gun (CFEEG) |
|
|
Funnels used to fill cold traps with liquid nitrogen for EMs |
|
Cold trap to prevent contamination of TEM specimen |
|
ACD (anti-contamination device) operation on TEM system |
|
|
|
|
EELS collection angle in diffraction and STEM modes and its measurements |
|
Effects of entrance aperture/collection angle on EELS |
|
Spatial resolution of EFTEM mapping affected by collection angle |
|
Dependence of information depth on primary electron beam energy/incident angle/collection angle in REELS |
|
Color tones of materials |
Collection angle of EDS detector |
|
|
Collection angle in TEM diffraction and STEM modes |
|
Dependence of collection semiangle on objective aperture in TEM imaging mode |
|
Collimator in EDS detectors in EMs |
|
Collision |
|
Collision (ionization) stopping power |
|
Hard collision between charged particle and atom |
|
Electron collision with matter in TEM |
|
Soft collision between charged particle and atom |
|
|
Variation of electron beam current in EM columns |
|
|
Columnar substructures in crystals |
|
Diffuse diffraction streaks in electron diffraction from columnar substructures |
|
|
|
|
Properties of coma-free lenses |
|
Off-axial coma and field of view |
|
Difference between axial coma and twofold astigmatism |
|
Coma-free point/plane |
|
Electron-beam-tilt-induced coma in TEM |
|
Wobbler for coma-free alignment with beam tilt |
|
|
Aberration coefficient C2,1 (B2): axial coma aberration |
|
Axial coma (B2) correction with Ronchigram |
|
Determination of axial coma in TEM measurements |
|
Coma-free alignment in TEM based on caustic image |
|
Coma-free alignment in TEM for magnetic materials |
|
|
|
|
Comparison between CBED and electron holography |
|
Comparison between STEM and SEM |
|
Comparison between EDS and AES |
|
Comparison between EDS and EELS |
|
Comparison between TEM and SEM |
|
Comparison between XAS and EELS |
|
Comparison between CBED and EBSD |
|
Comparison between CBED and SAD (selected area diffraction) |
|
Comparison between CTEM and STEM |
|
Comparison between EELS and AES |
|
Comparison between optical/light and electron microscopes |
|
Comparison between TEM and STEM bright field imagings |
|
Comparison between X-ray and electron diffractions |
|
Comparison between VEELS and conventional optical spectroscopy |
|
Comparison between TEELS (EELS) and REELS |
|
Comparison between FIB, electron beam and laser beam techniques |
|
Comparison between EDS and WDS |
|
Comparisons between HRTEM and EELS techniques |
|
Comparison between HRTEM and HR-HAADF-STEM imaging |
|
Comparison between different electron sources/guns |
|
Comparison between backscattered electron & secondary electron imagings |
|
Comparison between conventional and synchrotron X-ray Diffraction |
|
Comparison between single crystal and powder X-ray diffractions |
|
Comparison between FIB and Ar (argon) ion milling specimen preparations |
|
Comparison between EFTEM and EELS mapping |
|
Comparison between low- and high-voltage (S)TEM measurements |
|
Comparison of data acquisition times of various techniques
|
|
Comparison between Cathodoluminescence and EELS |
|
Comparison between effects of large and small collection angles in EELS |
|
Comparison of different EELS techniques |
|
Comparison of microscope conditions with parallel and convergent beams |
|
Comparison between infrared spectroscopy and EELS |
|
Comparison among TEM, APT,ToF SIMS and ICP-MS |
|
Comparison between XPS and various SIMS |
|
Comparison between various SIMS |
|
Total, partial and integral cross-sections for inner-shell ionization |
Comparisons: some technique considerations |
|
Comparison of various X-ray spectrometers |
|
Diffraction comparison between different cubic crystal structures |
|
Advantages and disadvantages between thin and thick/bulk sample in EMs |
|
Intensity and imaging comparison between elastic and inelastic scatterings |
|
Comparison between aberration-corrected and uncorrected EMs |
|
Comparison between X-rays and energetic moving electrons |
|
Comparison between conventional electron diffraction and PED, and PED applications |
|
Comparison between EFG(field emission)-TEMs and CTEMs (LaB6 and tungsten) |
|
Energy resolutions of different spectroscopic techniques |
|
Comparison of lens conditions between TEM diffraction and TEM imaging modes |
|
Comparison of electron optics of various filters & spectrometers |
|
Comparison between common pumps used in EMs |
|
Comparison between low and high voltage TEM/STEM |
|
Comparison between low and high voltage EELS measurements |
|
Comparison of EDS measurements with low- & high-energy incident electrons |
|
Relationship between electron diffraction patterns and stereographic projections |
Comparisons: Materials and their applications |
|
Comparison between ionic, covalent, and metallic materials |
|
Comparison between valence band (outer) and core (inner) electrons |
|
Comparison between different batteries |
|
Comparison between different memories |
|
Companies/manufacturers producing FIB & EM instruments |
|
|
|
Modulation/satellite reflections due to mutually commensurate mismatch |
|
|
Compounds |
|
Crystal structure of compounds |
|
|
|
|
Etching of III-V/compound semiconductor materials |
|
|
|
Compressive/mechanical pumps |
|
|
|
Objective aperture for STEM imaging |
|
Condenser lenses/apertures in TEMs |
|
Artifacts induced by misalignment of condenser aperture |
|
|
|
|
Troubleshooting of microscope computers |
|
Computer/remote application in EMs |
|
Compton scattering of electrons |
Constant-loss approximation on process of secondary electron generation |
|
|
Condenser lenses/apertures in TEMs |
|
Detailed optics of condenser lens in TEMs/STEMs |
|
Twin condenser lens systems in EMs (CL1/CL2) |
|
'Mini' lens |
|
Wobbler for condenser lens excitation in TEM/STEM |
|
Beam alignment between condenser and objective lenses |
|
Correction of astigmatism of condenser lens using caustic image
|
|
Astigmatism corrections of condenser and objective lenses in TEM for magnetic materials |
|
Illuminating spot size & intensity changed by condenser lens |
|
|
|
|
Outer-/Outermost-shell electrons (electrons in valence- and conduction-bands) |
|
Conduction- & valence-band offsets |
|
Unoccupied energy levels in conduction band (EELS) |
|
|
|
Contrast & intensity in annular dark field (ADF) STEM images |
Contrast analysis of HAADF-STEM images |
Confocal/focal series STEM |
|
|
|
Barrier layer in contacts in ICs |
|
Contact failure in ICs |
|
Ohmic contacts in ICs |
|
Historical development of ohmic contacts in Si-based ICs |
|
Voids formed in Si at contact interfaces |
|
Spiking at contacts in ICs |
|
Non-Ohmic contact failure in ICs |
|
|
Contamination |
|
Contamination/corrosion in ICs/wafers |
|
Contamination of GIF system |
|
|
ACD (anti-contamination device) operation on TEM system |
|
Contamination of apertures |
|
Cold trap to prevent contamination of TEM specimen |
|
Vacuum contamination in EMs |
|
Contamination reduction in EM vacuum |
|
TEM/STEM film thickness measurements based on contamination spots |
|
Contamination and cleaning of electron guns in EMs |
|
Effect of hydrocarbon in SEM observation |
|
Cleaning of hydrocarbon contamination by oxygen radicals in EMs |
|
Degradation of EDS spatial resolution due to specimen contamination |
|
Condenser stigmators |
Concave lens in electron microscopes |
Continuous/discrete/fast Fourier transform (DFT/CFT/FFT) |
Convolution/folding of functions |
Contrast/visibility of dislocations and stacking faults in TEM and EMs |
|
Contrast/visibility of images |
Contrast: Image contrast in aberration-corrected EMs |
|
|
TEM contrast and underfocus |
|
Mass-thickness contrast in TEM images |
|
Diffraction contrast in TEM images |
|
TEM contrast limit of chemical elements |
|
Correction of objective astigmatism with minimum background contrast technique |
|
Background contrast in TEM/STEM images |
|
High contrast aperture in TEMs |
|
Factors affecting contrast/intensity of elemental measurements (EELS & EDS) |
Contrast in HRTEM imaging |
|
Minimum (phase-)contrast in (HR)TEM imaging with Gaussian defocus |
|
Maximum (phase-)contrast in (HR)TEM imaging (with Scherzer defocus) |
|
Contrast delocalization/blurring effect in TEM images |
|
Contrast of atoms in TEM |
|
|
Contrast reversal of bright field TEM/STEM images |
|
Contrast Reversal in SEM imaging |
|
Contrast reversal in HAADF imaging |
|
|
Collection efficiency |
|
Collection efficiency of EDS |
|
Collection efficiency of EELS |
|
Collection efficiency of secondary electrons in SEM |
|
Collection efficiency of backscattered electrons |
|
|
Contrast dependence on accelerating voltage of PE (primary electrons) |
|
Dependence of dopant contrast in Si on accelerating voltage of PE |
|
Contrast dependence on spot size (probe current) |
|
Contrast dependence on tilt angle of sample |
|
Contrast dependence on design of the microscope |
|
Contrast dependence on detector position |
|
Contrast dependence on dopants in semiconductors |
|
Contrast dependence on features (edge effect) |
|
Contrast dependence on lens shape |
|
Contrast dependence on chamber shape |
|
Contrast dependence on scan speed |
|
Atomic contrast (Z-contrast) in SEM |
|
Charge-induced SE (secondary electron) contrast in SEM |
|
Contrast dependence on surface structure/surface-topography contrast |
|
Contrast dependence on vaccum level/gas pressure |
|
Contrast dependence on detector bias |
|
Contrast dependence on working distance |
|
Contrast dependence on angle of detection |
|
Contrast reversal |
|
Contrast dependence on specimen composition/elements of materials |
|
Contrast in SEM Images: voltage contrast |
|
Shadowing contrast in SEM |
|
Bias-induced contrast/intensity effect in SEM |
|
Contrast dependence on negative potential on the sample |
|
Correction of objective astigmatism with minimum background contrast technique |
|
|
|
|
Topographic contrast (sharpness) depending on beam energy |
|
Topographic contrast (sharpness) affected by the detector position |
|
|
Artifacts in CBED patterns |
|
CBED operation procedure |
|
Applications of CBED |
|
Measurements of convergence semi-angle in STEM and CBED |
|
Intensity distribution in the CBED disks |
|
Comparison between CBED and SAD (selected area diffraction) |
|
Sample thickness determination using CBED |
|
Bragg spots in CBED |
|
Excitation error and Ewald sphere in CBED |
|
Focused convergent incident electron beam |
|
Defocused convergent incident electron beam |
|
Deficiency lines in zero-order disc in CBED patterns |
|
Higher order Laue zones (HOLZ) lines in CBED |
|
Effects of beam-specimen interaction volume on CBED |
|
Pixel resolution for recording CBED patterns |
|
Zero-order disk of CBED patterns |
|
Probe shift in TEM system when switching between CBED and other modes |
|
Comparison between CBED and EBSD |
|
CBED Kikuchi pattern contrast depending on samples thickness |
|
Large angle convergent beam electron diffraction (LACBED) |
|
Dislocation detection by CBED and LACBED |
|
Disk size/radius in CBED |
|
Rocking-curve intensity oscillations within CBED |
|
Comparison between CBED and electron holography |
|
Relationship between diffraction group and point group |
|
Spatial resolution in CBED measurements |
|
Dynamical extinction lines in CBED patterns |
|
Comparison between X-ray (XRD) and electron diffractions |
|
Improvement of CBED analysis by energy filter |
|
Accuracy of CBED patterns |
|
|
Accuracy of strain measurement by CBED |
|
Optimization of specimen thickness for strain analysis by CBED |
|
CBED optimization for strain analysis |
|
Splitting of HOLZ lines in CBED patterns |
CBED in STEM mode |
|
Polarization in ferroelectrics measured by CBED in STEM mode |
|
|
|
|
Linear contrast transfer theory |
|
Phase contrast transfer function in real EMs |
|
Diffractogram & phase Contrast Transfer Function (pCTF) |
|
Artifacts in TEM contrast transfer patterns and profiles |
|
Sensitivity of CTF to defocus of objective lens |
|
Beam convergence angle/coherence effects on CTF patterns |
|
Electron Ronchigram contrast transfer function (CTF) in STEM |
|
TEM/STEM characteristics affected by CTF damping |
|
Converging-lens control system in EMs |
Conventional TEM (CTEM) |
Convergence |
|
Convergence semiangle in TEM and diffraction modes |
|
Electron beam convergence & convergence angle |
|
Aberration & beam spread/convergence |
|
Dependence of information depth on primary electron beam energy/incident angle/collection angle in REELS |
|
Spatial resolution/beam spreading in STEM depending on convergence semiangle |
|
Beam convergence angle/coherence effects on CTF patterns |
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Electron beam convergence angle and coherence |
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Applicable larger convergence angle in aberration-corrected EMs |
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Measurements of convergence semi-angle in STEM and CBED |
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Comparison of microscope conditions with parallel and convergent beams |
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Beam convergence angle/coherence effects on phase shift |
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Converter |
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Analog-to-digital (A/D) converter |
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Convex |
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Convex electromagnetic lens |
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Convex structures |
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Material growth on convex surfaces |
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Cooling systems |
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Liquid nitrogen (N2) cooled cryostat (e.g. in EDS detectors) |
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Peltier mechanical cooling |
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Peltier thermoelectric cooling |
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TEM/STEM cooling holders and specimen cooling |
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Water cooling in EMs |
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Cooling rate to make metallic glasses from melts |
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Generation of defects in crystals depending on cooling rates |
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Coordination number study by ELNES & EXELFS |
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Coordination number dependence on free volume in metallic glass |
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Short-range-orderings dependence on coordination number in metallic glasses |
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Coordination number of atoms in crystals |
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O2- coordination and bond strength |
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EELS measurement of copper (Cu) |
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EDS measurement of copper (Cu) and its artifacts |
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Shell occupancies and binding energies of the electron shells in Cu |
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Amorphous CuxZry alloys |
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Zrx–Nby–Cuz–Nim–Aln alloys |
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X-Cu phase diagrams |
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Al-Cu alloy |
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Copper silicide |
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Cu2ZnSnSe4 |
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La2CuSnO6 |
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Copper windings of wire in electromagnetic lenses |
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Cu-CeO-YSZ |
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CuxZryTiz |
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Cu-based metallic-glass alloys |
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Cu2O |
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La2-xBaxCuO4 |
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Failure modes of copper interconnect in ICs |
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Electromigration (EM) diffusion of copper |
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Copper (Cu) interconnects with tantalum (Ta) barrier |
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Copper (Cu) with dielectric diffusion barrier SiCxNy |
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Barriers for copper interconnections |
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Cu/TiN/TiSi2/Si Contacts |
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Copper damascene interconnects
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Comparison between valence band (outer) and core (inner) electrons |
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Core electron energy modified by bond formation |
Core-Loss |
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Gaussian Focus for Core-Loss EFTEM Imaging |
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Difference of focus depth for inelastic (core-loss EFTEM) and elastic imaging |
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Plasmon signal affected by core-loss transitions in EELS |
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Coulomb interaction between heavy charged particle and orbital electron |
Count rate in EDS measurements |
Cost of EM and related system and services |
Cost of lasers and lights |
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Shape of ionization edge/core-loss edge in EELS |
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Correction |
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3D effect and relevant correction in EDS quantification |
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Comparison between ionic, covalent, and metallic materials |
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CPU |
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Creep |
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Void formation by Nabarro–Herring creep |
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Criteria |
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Performance criteria in HRTEM |
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Critical |
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Accuracy of CD measurements using TEM |
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Critical-dimension (CD) in integrated circuits (IC) |
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Critical sample thickness for EDS measurement |
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Critical excitation energy |
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Accuracy of CD (critical dimension) measurements using TEM |
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Critical ionization energy versus characteristic X-ray energy |
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Critical ionization energies of some elements |
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Cross correlation function (XCF)/coefficient between two images |
Crossed lattice fringes to form HRTEM images |
Cross product |
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Determination of Miller indices of planes |
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Right-hand rule for cross products |
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Zone axis determined by cross-product |
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Cross section (probabilities) of scatterings: Introduction |
Cross sections (probabilities) of events: Introduction |
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Cross section of high-angle scattering of electrons |
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Binary-encounter-Bethe (BEB) method for cross section calculation |
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Elastic cross section of a complex material |
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Mott cross section |
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Rutherford cross-section |
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Differential cross section of total (elastic & inelastic) electron scattering |
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Damage cross section in EELS measurements |
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Cross section of EELS K shell ionization |
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Bethe cross section |
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Cross section for bremsstrahlung production |
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Cross section of plasmon scattering |
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Cross section of secondary-electron generation |
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Ionization cross section |
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Cross section of L-shell ionization |
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Cross section of K-shell ionization |
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Displacement cross sections of atoms due to electron irradiation |
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Cross sections of electron inelastic interaction in DNA |
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Damage cross section for electron irradiation |
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Accelerating voltage dependence of scattering cross-section for ionization |
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Cross-section for inelastic scattering in EELS measurements |
Cross-over |
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Cross-over formed by focusing electron beam |
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Electron cross-over in TEM/STEM mode |
Cryo |
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Cryo-focused ion beam-SEM (FIB-SEM) |
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Cryogenic (adsorption) pumps & cold traps for vacuum |
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Cryogenic transmission electron microscopy (cryo-TEM) |
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Cryo-preparations of TEM specimens |
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Cryostat (e.g. in EDS detectors) |
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Crystalline phase analysis by EELS plasmon |
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Crystalline phase analysis by EELS core-loss |
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Diffusion/diffusivity of elements through single crystals |
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Difference of binding energies in amorphous and crystalline phases |
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Difference between bond lengths of amorphous and crystalline materials |
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Crystal percentage in metallic glasses made from melts |
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Coordination number of atoms in crystals |
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Notation for crystal structures |
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Incommensurate modulated phases/structures |
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Incommensurate composite crystals |
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Quasicrystals |
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Misfit layer structures |
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Intergrowth compounds |
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Vernier structures |
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Chimney-ladder structures |
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Crystal field theory |
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Crystal family |
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Crystal growth in ICs studied by electron tomography |
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Most common crystal structure of elements in periodic table |
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Determination of crystal orientation |
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32 point groups |
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Determination of unknown crystal structures |
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Planes in lattice system of crystals |
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Directions in lattice system of crystals |
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Fourier transform and FFT of HRTEM image of crystalline materials |
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Ronchigrams of crystalline films in STEM |
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Anisotropy of physical and chemical properties of crystals |
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Crystal orientation/diffraction effects on EXELFS of EELS signals |
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Crystal structure of compounds |
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Space group/crystal structure depending on substitution concentration |
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Determination of crystal structures using electron diffraction technique |
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Determination of crystal structures using HRTEM technique |
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Atomic arrangement in crystal structures |
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Orientation relationship between two crystals |
Crystallization |
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Crystallization of metallic glasses |
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Crystallization kinetics of amorphous materials |
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Crystallization speed |
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Dependence of crystallized fraction on annealing time and temperature |
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Crystallographic structure refinement |
Crystallographic orbit |
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TEM specimen preparation by crushing bulk crystals |
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Stereographic projection for a cubic film with [001] normal |
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Interfacial angles of cubic crystals |
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HRTEM imaging of cubic crystal structures |
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Diffraction comparison between different cubic crystal structures |
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23 point group |
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m-3 point group |
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432 point group |
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-43m point group |
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m-3m point group |
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Determination of point groups of cubic systems |
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Curie temperature/Curie point |
Curie-Weiss temperature |
Current in EMs & its measurement |
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Stability of lens currents in EMs |
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Dependence of electron probe/beam current on probe size in EMs |
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Probe current in EMs |
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Current centering in TEM |
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Variation of electron beam current in EM columns |
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Measurement of electron beam/probe current |
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Measurement of electron probe current with EELS spectrometer |
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Beam current of FIB |
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Emission current in electron guns |
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Low electron beam current density to minimize specimen damage in EELS measurements |
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Current density scaling of interconnects in ICs |
Current: Electrons/holes mobility & current versus strain in materials |
Curtaining effect in FIB-EM sample preparation |
Curved edge in EELS systems |
Cyclic voltammetry (CV) |
Curve ROI and Loop ROI on Gatan DigitalMicrograph |
Cylinder symmetry of some lenses |
Curved optics in EMs |
Cs/C3 & C5 (spherical aberration) correctors |
Cylinders in EMs |