Chapter I |
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Ice formation in EM observations |
Icosahedral short-range ordering |
Icosahedral quasicrystals (IQCs) |
ICP: Comparison among TEM, APT, ToF SIMS and ICP-MS |
Ideal/perfect lenses in EMs |
III-V compounds |
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Illumination in TEM mode |
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Illumination in STEM mode |
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Imaging geometries of TEM and STEM systems |
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Coherent illumination in EMs |
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Parallel illumination in EMs |
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Electron beam convergence |
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Effects of axial illumination conditions in TEM system |
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Maximum usable illumination angle in STEM |
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Uneven illumination effect on Fourier transform in TEM |
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Effects of illumination coherence on spatial resolution in TEMs |
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Illuminating spot size & intensity changed by condenser lens |
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Image |
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Image-forming lens system in (S)TEM systems |
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Image curvature in EMs |
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TEM image formation/imaging process |
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Image-forming Cs-corrector |
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Image quality in EMs |
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Image helical rotation and inversion when changing magnification or focusing |
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Image sensors/Electronic optical imaging sensors |
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Image spectroscopy/imaging spectrum (IS) |
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Morphological image processing |
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Minimization of image drift and other instabilities |
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Young’s fringes produced by TEM image shift (with and without monochromator) |
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Aberration determinations by image shift due to tilting illumination |
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Image-shift function and its lens in TEM |
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Diffraction pattern formed in imaging condition/image plane/objective plane |
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Electron wavefunction in image plane in real space and reciprocal space |
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TEM spatial resolution improved by defocus series |
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Imaging conditions |
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Best TEM imaging conditions |
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Immersion |
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In-lens (immersion lens/through-the-lens) SEM detectors |
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Symmetric immersion lens as objective lens in SEM systems |
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Symmetric immersion lens as objective lens in SEMs |
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Impact parameter |
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Implantation |
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Silicon/nitrogen implantation application to suppress IC failure |
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Defects in crystals formed by ion-implantation and annealing |
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In-focus in electron microscopy |
In-column energy filters & spectrometers |
In-line electron holography |
In-line/Gabor’s holography |
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Chromatic aberration and its coefficient |
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Incoherence/energy spread in SEM imaging |
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Incoherent scattering (diffuse scattering) of electrons in TEM |
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STEM/TEM imaging with incoherent electrons |
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Incoherence & HAADF |
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Incoherent coincidence site lattice (CSL) boundary |
Incommensurate phases |
Incomplete charge collection in EDS measurements |
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Index of refraction |
Index of refraction of electron lenses |
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Indexing Kikuchi lines |
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Indexing SAD (selected area diffraction) patterns |
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Indexing CBED patterns |
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Indexing HOLZ patterns |
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Diffraction comparison between different cubic crystal structures |
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Miller indices |
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Phase identification with XRD and its procedure |
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Indexing electron diffraction patterns starting with zone axis |
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Examples of indexed electron diffraction patterns of HCP crystals |
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Examples of indexed electron diffraction patterns of FCC crystals |
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Low index planes |
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Zone axis determined by cross-product |
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Examples of indexed electron diffraction patterns of rhombohedral crystals |
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Example of indexing electron diffraction pattern from twins |
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EDS measurement of indium (In)
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AlGaInP |
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InN |
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InP |
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InAs |
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Compound semiconductor |
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Phase diagram of In-X |
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Indirect aberration corrections |
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Indirect interband transition |
Indirect bandgap |
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Inelastic scattering from outer-shell electrons shown in EELS profile |
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Angle of inelastic scattering |
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Cross-section for inelastic scattering in EELS measurements |
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Electron inelastic differential cross section |
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Delocalization in inelastic scattering |
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Spatial resolution of inelastic signals |
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Intensity comparison between elastic and inelastic scatterings |
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Theory on inelastic mean free path (IMFP) of electrons |
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Dependence of inelastical scattering of electrons on atomic number |
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Dependence of single and multiple inelastical scatterings of electrons on TEM sample thickness |
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Mean free path of electron scattering (elastic and inelastic) |
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Inelastical phonon excitation and thermal diffuse scattering (TDS) of electrons in EMs |
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Elastic-inelastic multislice simulation for EELS |
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Inelastic imaging |
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Difference of focus depth for inelastic (core-loss EFTEM) and elastic imaging |
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Information limit/transfer in HRTEM |
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Information loss in measurements |
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Information loss in HRTEM measurements |
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Infrared |
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Infrared optical fibers |
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Infrared windows |
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Comparison between infrared spectroscopy and EELS |
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Inner-shell electron |
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Inner-shell excitation in electron energy loss spectroscopy |
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Ground-state energy of inner-shell electron |
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Excitation of inner-shell electrons |
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Input dialogs and popup windows of scripts for DM |
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History of In Situ/environmental TEM/STEM observations |
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Vacuum sealed electron transparent windows for in-situ TEM |
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Thermal-diffuse-scattering in in-situ heating HAADF-STEM |
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Black-white diffraction contrast due to formation of loops & defect clusters |
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In-situ TEM observations of chemical processes |
In situ observations |
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In situ observation in optical microscopes |
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In situ observation in cathodoluminescence imaging |
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In situ SEM observation of electromigration |
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In Situ liquid TEM/STEM analysis |
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Specimen (stage) drift/instability/movement in TEMs/STEMs |
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Electron beam drift/instability/movement in TEMs/STEMs |
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Instability of TEM imaging due to charging |
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Instability of electron gun emission |
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Instability in accelerating voltage of electron beam |
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Installation/room/environment of EM systems |
Integrated reflection coefficient |
Total, partial and integral cross-sections for inner-shell ionization |
SEM observation of structures underneath insulators |
Intensity |
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Intensity of electron wave in specimen depth |
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Kinematically diffracted electron and X-ray beams & their intensities |
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Intensity of transmitted electron beam in TEM |
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Intensity of diffracted electron beam in TEM |
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Intensity distribution in the CBED disks |
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Intensity distribution of HRTEM image |
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Intensity & amplitude of scattered wave by atoms |
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Intensity comparison between elastic and inelastic scatterings |
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Diffractogram intensity spectra in TEM measurements |
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Diffractogram intensity spectra of thin amorphous TEM specimen |
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EDS intensities and their ratio collected by detector |
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Maximum intensity of plasmon energy loss peak |
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Diffraction intensity distribution in reciprocal lattices |
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Intensity/counts of EELS |
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Intensity of bremsstrahlung X-rays: Kramers' law |
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Intensity of characteristic X-rays |
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Beam intensities at two-beam diffraction condition |
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Factors affecting contrast/intensity of elemental measurements (EELS & EDS) |
Interaction |
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Interaction constant/parameter (between incident electrons and specimen) |
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Energy loss function in interaction of incident electrons with materials |
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Interaction between incident charged particle (ion) and matter |
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Interaction of X-ray with materials |
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Dynamical theory for energetic electron-matter interaction |
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Incident electrons interacting with electrons in solids |
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Interaction between incident electron beam and atomic nuclei |
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Interaction volumes for generation of secondary electrons |
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Interaction volumes for generation of Auger electrons |
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Interaction volumes for generation of backscattered electrons |
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Interaction volumes for generation of characteristic X-rays |
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“Effective” interaction volume for EELS measurements in TEM |
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Interaction volumes for generation of continuum X-rays |
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Interaction volumes for generation of secondary fluorescence (X-rays) |
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Effects of beam-specimen interaction volume on CBED |
Interatomic spacing of materials |
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Analysis of interatomic spacing of amorphous materials using electron diffraction |
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Interband transition strength |
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Direct interband transition |
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Indirect interband transition |
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Interband plasmon peak energy |
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Free-electron and interband transition metals |
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Interface |
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Difference of atomic structure between surface, interface, and bulk |
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Interface between two crystals |
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Investigation and quantification of elemental segregation at interface |
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TEM contrast/fringes at interface between two materials |
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Interfacial diffusion mechanism of electromigration in interconnects in ICs |
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EELS profile at interface between two thin films |
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Interfacial defects in materials |
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Interface analysis by TEM/STEM |
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ADF(HAADF)-STEM contrast at interfaces |
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Stress/strain fields at interfaces |
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Interfacial angles of cubic crystals |
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Plane wave and interference pattern in electron holography |
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Coherence of electron beam/interference pattern in STEM/Ronchigram |
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Interference between direct and diffracted beams in TEM |
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Interference width in off-axis hologram |
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Elements with possible X-ray interferences in EDS |
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Film thickness determination by X-ray reflectivity/interference |
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Intergrowth compounds |
Interline transfer (IT) CCD |
Intermediate/diffraction lens |
International/Hermann-Mauguin notations for symmetry elements |
International technology roadmap for semiconductors |
International Union of Pure and Applied Chemistry (IUPAC) |
Interplanar crystal spacing of the seven crystal families |
Internet & World Wide Web (website) for electron microscope and materials |
Interpretation of EM data |
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Atomic number (Z)-contrast Imaging on STEM |
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Poor TEM sample quality limiting data interpretation |
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Interpretation of TEM/STEM Images |
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Interstitial |
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Vacancy & interstitial generation in FIB milling |
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Point defects (vacancy & interstitial) generated in Ar-milling |
Inversion |
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Center of inversion (center of symmetry, i) |
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Image helical rotation and inversion when changing magnification or focusing |
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IBr |
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ICl |
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Lead Iodide (PbI2) |
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Ion |
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High angle elastic scattering of ions |
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Optics in electron and ion microscopes |
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Mechanical, electron and ion probe diameters |
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EDS measurement of ion (Fe) |
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Electromigration transport mobility of ions in materials |
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Focused ion beam (FIB) |
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Scanning helium ion microscopy (SHIM or HeIM) |
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Secondary ion mass spectrometry (SIMS) |
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FIB (ion beam) induced deposition (IBID) |
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Secondary electron emission by ion irradiation |
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Ion sources for FIB |
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Grain growth induced by FIB milling |
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Chemical changes induced by ion beam irradiation |
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Intermetallic phase formation induced by ion beam irradiation |
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"Mottling" visible in FIB and Ar-milled specimens |
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Ion getter pumps |
Ionic migration induced by charging effect in SEM |
Ion irradiation |
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Ion irradiation induced secondary electron emission |
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Secondary electron emission from metal surfaces by ion irradiation |
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Ion irradiation dose |
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High-energy-particle irradiation on materials |
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Comparison between ionic, covalent, and metallic materials |
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Atomic & ionic radii and valence states of chemical elements
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Radius ratio rule |
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Ionic sputtering |
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Ionic sputtering yield in FIB |
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Ionic sputter yield depending on grain orientation |
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Ion milling for TEM sample preparation |
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Milling rate of materials in FIB |
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Critical (ionization) energy/threshold (theory) |
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Ionization cross sections and ionization energy/threshold (table) |
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Ionization cross section |
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Mean ionization energy (potential) of complex materials |
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Radiation ionization energy to form electron-hole pairs in materials |
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Ionization energy/dopant energy levels of impurities in Si |
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Momentum transfer of incident electrons after atomic ionization/energy loss |
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Penning gauge/(cold cathode) ionization gauge |
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Ionization damage (radiolysis) by incident electrons processes (mechanisms) |
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Shape of ionization edge/core-loss edge in EELS |
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Most possible scattering angle of incident electrons after atomic ionization/energy loss |
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Shape of ionization edge/core-loss edge in EELS |
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Fine structure of ionization edges in EELS |
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Intermetallic phase formation induced by ion beam irradiation |
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Interaction between incident electron beam and atomic nuclei |
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Apple products: iPhone, iPad, & iPod touch, Apple watch & MacBook |
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EDS/x-rays of iron (Fe) |
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EELS measurement of iron (Fe) |
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C-doped Fe/carbon in iron |
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Ni-doped Fe/nickel in iron |
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Steels |
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Iron (Fe) shroud in electromagnetic lenses |
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TMO6 octahedral lattice |
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Fe-based metallic-glass alloys |
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FePt alloys |
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Non-isochromaticity of energy filter |
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Isoplanatic approximation |
Isotropic wet etch |
Iterative wave function reconstruction for image series reconstruction with TEM |
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