Chapter S |
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Salary and job positions for electron microscopists |
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Sample for EMs |
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Sample requirements for high resolution atomic-number contrast HAADF imaging |
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SEM samples |
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TEM samples |
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Carbon supports for EM analysis |
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Sample stages/holders in EMs and FIB |
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Coating to avoid charging in SEM samples |
Sample-tilt in TEM |
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Sample-tilt induced effects in TEM |
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Diffraction variation due to TEM sample tilt |
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Sapphire: Al2O3 |
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Satellites |
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Main and satellites reflections in electron diffraction patterns |
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Modulation/satellite reflections due to mutually commensurate mismatch |
Saturation |
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Electron gun saturation |
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Binning versus saturation/exposure time in CCD camera |
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Binning versus saturation/exposure time in CCD camera |
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Smearing/blooming in CCD |
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Streaks formed by smearing/blooming in CCD camera |
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Streaking of diffraction spots due to thin structures in TEM specimens |
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Savitzky-Golay filter |
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Scaling |
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Current density scaling of interconnects in ICs |
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Scaling of CMOS-FET |
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Scaling in IC designs |
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Scan speed/Dwell time in TEM/STEM imaging |
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Sc2O3 |
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Electron-beam scanning/deflecting coil control system in EMs |
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Scanning coils in EELS/GIF systems |
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Comparison between backscattered electron & secondary electron imagings |
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Comparison of TEM and SEM |
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Advanced/atomic/high resolution/latest SEMs |
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Contrast in SEM Images |
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Charging of electrically isolated materials in SEM |
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EELS measurements in EMs with low-energy incident electrons |
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Cs correction in SEM |
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Active voltage contrast (AVC) in FIB and SEM |
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Low-voltage scanning electron microscopy (LVSEM) |
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Negative charging case of PVC in SEM |
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Passive voltage contrast (PVC) in FIB and SEM |
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Positive charging case of PVC in FIB and SEM |
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Schematic diagram of SEM systems |
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SEM observation of structures underneath insulators |
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Virtual objective aperture (VOA) in SEM |
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Objective lens in SEMs/STEMs |
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Objective polepieces in EMs |
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Tilt of electron beam in EMs |
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Bias/voltage in SEM for SE and BSE separations |
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Incoherence/energy spread in SEM imaging |
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SEM spatial resolution affected by accelerating voltage of electron beam |
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Tomographic properties of SEM and dual-beam techniques |
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Wave function of focused probe in STEM/SEM |
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X-ray detector & EDS comparison in SEM/TEM/STEM |
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Desktop/portable/tabletop SEM |
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Dual beam FIB/SEM |
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Manufacturers/companies producing FIB & EM instruments |
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Cryo-focused ion beam-SEM (FIB-SEM) |
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Effect of hydrocarbon in SEM observation |
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Dependence of electron probe/beam current on probe size in EMs |
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Development history of SEM technique |
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Effect of amorphous layer on contrast of high resolution/HRSEM images |
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HRSEM image contrast as function of crystal tilt |
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SEM resolution affected by delocalization of inelastic scattering |
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Advantages and disadvantages of FIB technology for EM sample preparations |
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Curtain effect in FIB-EM sample preparation |
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Nanoparticles sample |
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Double cross-sections for examination of damage of prepared EM sample surface |
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Plasma cleaning of FIB prepared specimens |
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Sample preparation for EBSD analysis |
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Alignments |
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Scanning helium ion microscopy (SHIM or HeIM) |
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Piezoresponse atomic-force microscopy (PFM) |
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Scanning-tunneling microscope (STM) |
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Scattering |
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Electron scattering within TEM specimen |
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Electron scattering within SEM specimen |
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Weak scattering in some materials in TEM observations |
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Most possible scattering angle of incident electrons for atomic ionization/energy loss |
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Dependence of scattering of incident electrons on scattering angle |
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Angular-resolved electron scattering |
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Scattering potential of crystal |
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Electron atomic scattering factors |
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X-ray atomic scattering factors |
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X-rays generated by scattered electron: an EDS artifact |
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Scattering vector/transferred wave vector after electron scattering with matter |
Schrödinger equation |
Scherzer |
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Scherzer defocus |
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Scherzer expression/resolution/limit |
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Scherzer theorem |
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Ronchigram at Gaussian/Scherzer focus |
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Scherzer phase plate |
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Optimal objective/Scherzer apertures
in CTEM & HRTEM imaging |
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Maximum (phase-)contrast in (HR)TEM imaging (with Scherzer defocus) |
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Schoenflies notations of point groups |
Schottky and other barrier heights |
Schottky emission electron guns |
Schottky effect |
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Scintillator-photomultiplier (PM) system |
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Ce-doped yttrium-aluminum garnet (YAG) |
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Electron backscattering from scintillator in EMs |
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Scintillating material |
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Scintillator-coupled CCD camera |
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Effect of screw axis on electron diffraction patterns |
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Screw dislocations |
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Scripts for Gatan Digital Micrograph |
Scroll vacuum pumps |
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Second-order phase transitions |
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Second-order aberration corrections |
Secondary electron detector in TEM/STEM |
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Standard SOLZ diffraction patterns for various crystal structures |
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Application of SEs other than electron microscopy |
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Disadvantages and harm of SE in some cases |
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Dependence of emission coefficient of secondary electrons on atomic number and accelerating voltage of incident beam |
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SE1/SE2 ratio (between different types of secondary electrons) affected by energy of primary electron beam |
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SE emitted from TEM thin film |
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Escape depth of secondary electrons |
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Separating BSEs from SEs in SEM |
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Trajectory of secondary electrons |
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Secondary electron energy spectroscopy |
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Redistribution and redistribution rate of SEs |
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Kinetic energy of secondary electron |
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EDS signal affected by secondary and backscattered electrons |
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Collection efficiency of secondary electrons in SEM |
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In-lens (immersion lens/through-the lens) SEM detectors |
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Everhart-Thornley (ET) detector |
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Lateral detectors in SEM |
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Contrast dependence on detector position |
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Backscattered electron detector |
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SE yield (emission coefficient) in EMs |
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Dependence of emission coefficient of secondary electrons on Z |
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Constant-loss approximation on process of secondary electron generation |
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Emission depth of secondary electrons |
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Mechanisms and processes of secondary electron generation and SE imaging |
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Responding time of SE emission after electron irradiation |
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Source of secondary electrons in SEM |
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Full width at half maximum (FWHM) of emitted SE distribution |
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Energy & most probable energy (MPE) of secondary electron emission |
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Contrast affected by accelerating voltage in SEM |
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Secondary electron emission from surfaces by ion milling and its angular dependence |
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Detection limits of SIMS |
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Comparison between various SIMS |
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Comparison between XPS and various SIMS |
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SIMS application of IC failure analysis |
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Comparison among TEM, APT, ToF SIMS and ICP-MS |
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Ionic sputtering yield in FIB & SIMS |
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Lateral ranges of probe ions in FIB and SIMS |
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Seignette salt/Rochelle salt (NaKC4H4O6•4H2O) |
Secondary X-ray (fluorescence) in EDS measurements |
Sector magnet spectrometer |
SEE (secondary electron emission) |
Seebeck effect imaging (laser) |
SE3 (third type of secondary electrons) in SEM |
Segmental Ronchigram autocorrelation function matrix (SRAM) for aberration correction |
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Segregations |
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Investigation and quantification of elemental segregation at interface |
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Measurement of elemental segregation at grain boundaries |
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Comparison between CBED and SAD (selected area diffraction) |
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Selected area diffraction (SAD) aperture |
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Indexing SAD (selected area diffraction) patterns |
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Selenium (Se) |
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A1-pCr2Se4-p (A = Ba, Sr, Eu, Pb) |
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Misfit layer chalcogenides: (AX)1+δ(BX2)n (A = rare earth/Sn/Pb/Sb/Bi; B = Ti/V/Cr/Nb/Ta; X = S/Se) |
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MgSe |
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ZnSe |
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CdSe |
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Cu2ZnSnSe4 |
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Self-absorption of outgoing X-ray in EDS measurements |
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Semiconductor device performances |
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Compound semiconductor |
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Nitride semiconductors |
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Semiconductor detectors |
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TEM specimen requirements in semiconductor industry |
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International technology roadmap for semiconductors |
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Schottky barrier heights |
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Properties of semiconductor materials |
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Etchants used in semiconductor manufacturing |
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Microwave semiconductor devices |
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Sense vector |
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Sensitivity/minimum detectable mass of EELS |
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Sensitivity/minimum detectable mass of EDS |
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Identification of soft failure and non visible defects in ICs |
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Sensitivity of thermal laser stimulation methods in EFA |
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Electronic optical imaging sensors/Image sensors |
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Separating BSEs from SEs in SEM |
Serial EELS spectrometer |
Service and sales of EM systems |
Sextupole/hexapole |
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Triclinic crystals |
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Monoclinic crystal systems |
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Orthorhombic lattices |
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Tetragonal crystal |
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Trigonal crystals (Rhombohedral crystals) |
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Hexagonal crystal systems |
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Cubic crystals |
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Seven crystal families (others) |
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Matrix of the seven crystal families in real and reciprocal spaces |
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Symmetry groups for the crystal systems |
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Interfacial angles of crystals of the seven crystal families |
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Spacing of lattice of the seven crystal families |
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Shadowing contrast in SEM |
Shadow image/Ronchigram/microdiffraction pattern/Azimuthal and radial circles in STEM |
Shallow trench isolation (STI) failure mechanisms of CMOS |
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Shape |
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Shape of electron diffraction spots |
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Shape memory alloys |
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Shape of ionization edge/core-loss edge in EELS |
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Shape of X-ray peak in EDS measurements |
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Sharpen filter in image processing |
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Sharpness |
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Topographic contrast (sharpness) depending on beam energy in SEM |
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Topographic contrast (sharpness) affected by the detector position in SEM |
Shear stress |
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Screw dislocation formation due to shear stress |
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Shifts |
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Chemical shift due to molecule formation |
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TEM specimen traverse induced by specimen tilting |
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Shift of HOLZ patterns relative to ZOLZ patterns |
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Gun-alignment coil control system/gun shift and tilt in EMs |
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Shift of probe in TEM system when switching different modes |
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Phase shift from defocus and spherical aberration |
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Probe shift in TEM system when switching between STEM and other modes |
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Shift of electron beam |
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Electron-beam-tilt-induced image displacement in TEM |
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Electron-beam-tilt-induced coma in TEM |
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Tilt & shift and their purities/pivot point/rocking point in TEM |
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Chemical shift detection of elements by EDS |
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Peak position shift in EDS |
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EEL spectra/image shift on camera caused by magnetic objects |
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Chemical shift detection of elements by EELS and EFTEM |
Shipping |
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IC failure induced during wafer packaging and shipping |
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Thermodynamic stability of metal gate oxides in ICs |
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Short circuit failure due to electromigration |
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Short failure in IC devices detected by passive voltage contrast (PVC) |
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Analysis of short-range properties of materials |
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Icosahedral short-range ordering |
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Study of short range order (SRO) by EXELFS |
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HRTEM images of atomic short-range ordering in crystals |
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TEM sample preparation for atomic short-range ordering analysis |
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Free volume in metallic glasses |
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TEM analysis of short range ordering in amorphous materials |
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fcc-type packing short range ordering of metallic glass |
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Short-range-orderings dependence on coordination number in metallic glasses |
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bcc-type packing short range ordering of metallic glasses |
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bct-type packing short range ordering of metallic glasses |
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Pair Distribution Function (PDF) analysis |
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Shoulder structure in EELS profiles |
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Shuffle transformation
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Electrostatic shutter in EMs |
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Shutter used in EELS and EFTEM measurements |
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Side-entry and top-entry lens in TEM systems |
Side-entry goniometer stages/holders in TEMs/STEMs |
Side wall in integrated circuits (IC) |
Sidewall implantation in TEM sample preparation with FIB |
Sigma (σ) bond |
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Signals |
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Signal-to-noise ratio increased by binning in CCD cameras |
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Signal-to-noise ratio (SNR) in the EELS spectrum |
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Dependence of signal types on sample thickness in EMs |
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Signal-to-noise ratio in TEM/STEM images |
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EDS/x-rays of silicon (Si) |
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EELS measurement of silicon |
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(HAADF) STEM images of silicon (Si) |
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Single crystalline silicon |
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Polycrystalline silicon |
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Amorphous silicon |
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Atomic-number contrast of silicon ions in ADF-STEM images |
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Silicon (Si) alloying anodes in lithium batteries |
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Diffraction patterns & crystallography of silicon (Si) |
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Silicon oils from diffusion pump |
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EM analysis of silicon |
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Solid solubility of various impurities in silicon |
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Stacking faults, twins and dislocations in silicon |
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Si-X phase diagrams |
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Extinctions and weak spots showing in electron diffraction patterns of silicon |
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Doped crystalline and amorphous Si (e.g. arsenic, boron, phosphorus doped) |
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Lithium-drifted silicon diodes & Si(Li) EDS detectors |
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Ionization energy/dopant energy levels of impurities in Si |
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Silicon nitride (SiNx) support/container for EM analysis |
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Thermal oxidation of silicon |
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Silicon/nitrogen implantation application to suppress IC failure |
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Silicon dust contamination in IC devices |
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Ammonium fluorosilicate [(NH4)2SiF6] |
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Si Kikuchi pattern & strain measurement |
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Local oxidation of silicon (LOCOS) |
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Si-based metallic-glass alloys |
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Comparison of various X-ray spectrometers |
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Development history of silicon drift detectors |
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SiGe and SiGe/Si system & its defects |
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WSix |
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TaSiNx |
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Polycrystalline silicon in solar cells |
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SiC |
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Silicide processes |
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Copper (Cu) with dielectric diffusion barrier SiCxNy |
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TiSix |
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Cu/TiN/TiSi2/Si contacts |
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PtSi in ICs |
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HfSiO4 |
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Copper silicide |
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Silicon nitride (Si3N4 & SixNy) |
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Cobalt disilicide (CoSi2) and cobalt silicide (CoSi) |
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Ca3Al2Si3O12 |
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Nickel silicide (Ni2Si/NiSi/NiSi2) |
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SiSn |
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Electrical properties of silicides |
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Mechanical properties of silicides |
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Optical properties of silicides |
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Thermal properties of silicides |
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Chemical properties of silicides |
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Stress distribution around silicides |
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Structures of silicides |
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Silicon dioxide/quartz/SiO2 analysis by EM-related techniques |
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SiO2 application in ICs |
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SEM observation related to SiO2 |
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EDS measurement of silver (Ag) |
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EELS measurement of silver (Ag) |
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Sputtering/etching of silver from electron irradiation in EMs |
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Silver in ICs |
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Phase diagram of silver-X |
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Ag-based metallic-glass alloys |
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SIMS (secondary ion mass spectrometry) |
Simple cubic crystals |
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Models for simulation in EM techniques |
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Simulation of electron optics |
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EM image simulations at high spatial resolutions |
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Software and program examples for EM-related simulation and analysis |
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Stobbs factor in TEM imaging |
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Simulation of ADF(HAADF)-STEM images |
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Lenz model for elastic scattering distribution simulation |
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Multislice simulation (MS) of TEM images |
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Bloch wave approaches for simulating TEM images |
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Simultaneous EELS and EDS acquisition |
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Single atom |
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Single atom detection of EELS |
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Energy level diagrams for single atoms, dimers, clusters & bulk materials |
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Single scattering distribution (SSD) & EELS deconvolution |
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Spatial resolution of EFTEM mapping affected by energy range |
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Single particle analysis in TEM tomography |
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Six-fold axis in crystals |
Sixfold symmetries in EMs |
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Dimension/size of EMs |
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Size of EDS detector in EMs |
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Size of aperture |
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Dependence of electron probe/beam current on probe size in EMs |
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Slip/glide planes and slip/glide directions |
Slow scan charge-coupled device (SSCCD) camera |
Small circles in Wulff Net |
Small electron source |
Smallest structures obtained by dual beam SEM/FIB/STEM deposition |
Smearing/blooming in CCD |
Smoothing filters |
Snorkel objective lens in some SEM systems |
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NaCl & sodium chloride structures |
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NaNbO3 |
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Seignette salt/Rochelle salt (NaKC4H4O6•4H2O) |
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Sobel edge filter (operator) |
Soft failure: Identification of soft failure and non visible defects in ICs |
Soft collision between charged particle and atom |
Soft X-rays |
Software |
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Software for EDS spectrum acquisition and analysis |
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NSS EDS software |
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Software for video recording on EMs |
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Polycrystalline silicon in solar cells |
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Best research-cell efficiencies for solar cells |
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Solenoids |
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Angular distribution/emission angle of secondary electron in SEM |
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Solid angle of electron source (in electron gun) |
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Solid angle of secondary electron detection in SEM |
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Collection angle/solid angle of EDS detector |
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Distance effect on solid angle of EDS detector |
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Materials for solid oxide fuel cells (SOFCs) |
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Carbon deposition/contamination in SOFCs |
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Solid immersion lens in thermal laser stimulation techniques
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Source of backscattering electrons in SEM |
Solid state detectors (SSDs) for EDS |
Source of secondary electrons in SEM |
Solubility |
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Nitrogen solubility in materials |
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Solid solubility of various impurities in silicon |
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Solid solubility of various impurities in germanium |
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Solid solubility of various impurities in carbon/diamond |
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sp2 hybridization |
sp3 hybridization |
Space-charge |
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Space-charge effect in electron beam |
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Spacecraft charging |
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Crystallographic space group notations/description |
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Unit cell |
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Centering translations |
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Point group |
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Translational symmetries |
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Determination of space group |
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Patterson space group |
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d-spacing ratios of allowed Bragg reflections for some space groups |
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Space group/crystal structure depending on substitution concentration |
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Crystal structure & space group of compounds |
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Centrosymmetric space groups |
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Non-centrosymmetric space groups |
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Chiral space groups |
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Equivocal space groups |
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Unequivocal space groups |
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A-centered lattices/A-centering & its space groups (only one crystal family) |
Orthorhombic |
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38: C2v14: Amm2, Am2m, Anc21, Bmm2, B2mm, Cm2m, C2mm |
39:
C2v15: Abm2, Ab2m,
Acc21,
Bma2,
B2am,
Cm2a,
C2ma,
C2mb |
40: C2v16: Ama2, Am2a, Ann21, Bbm2, B2mb, Cc2m, C2cm |
41: C2v17: Aba2, Ab2a, Acn21, Ac2a, Bba2, B2ab, Cc2a, Cc2b, C2ca, C2cb |
36: A21am, Cmc21, A21ma, Bb21m, Bm21b, Cbn21, Ccm21 |
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C-centered lattices/C-centering & their space groups (only two crystal families) |
Monoclinic |
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5: C23: C2, A112, A2, B112, F2, I2, I21 |
8: Cs3: Cm, Am, Im |
9: Cs4: Cc, Aa, An, A11a, B11b, Cn, Fd11, Ia, Ic |
12: C2h3: C2/m, A112/m, A2/m, B112/m, C2/a, C2/m11, F2/m, I112/m, I2/m |
15: C2h6: A2/a, C2/c , A112/a, A2/n, B1121/b, B112/b, B112/n, C2/c11, C2/n, F2/d, I112/a, I112/b, I2/a, I2/c, I2/n, I21/a, I21/c |
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Orthorhombic |
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20: D25: C2221, A2122, B2212, C212121 |
21: D26: C222, A222, B222, C21212 |
35: C2v11: Cmm2, A2mm, Bm2m, Cba2 |
36: C2v12: Cmc21, A21am |
37: C2v13: Ccc2, A2aa, Bb2b, Cnn2 |
63: D2h17: Cmcm, Amam, Amma, Bbmm, Bmmb, Cbnn, Ccmm |
64: D2h18: Cmca, Abma, Bmab, Abam, Acam, Bbam, Bbcm, Cbnb, Ccma, Ccmb |
65: D2h19: Cmmm, Ammm, Bmmm, Cban |
66: D2h20: Cccm, Amaa, Bbmb, Cnnn |
67: D2h21: Cmma, Abmm, Bmam, Cbab |
68: D2h22: Ccca, Abaa, Bbab, Cnnb |
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F-centered lattices/F-centering & their space groups (only two crystal families) |
Orthorhombic |
|
|
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|
|
|
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22: D27: F222, F212121 |
42: C2v18: Fmm2, Fbc21, Fca21, Fm2m, Fnn2, F2mm |
43: C2v19: Fdd2, Fdd21, Fd2d, F2dd |
69: D2h23: Fmmm, Fbca, Fcab, Fnnn |
70: D2h24: Fddd |
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Cubic |
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|
196: T2: F23 |
202: Th3: Fm-3, Fm3 |
203: Th4: Fd-3, Fd3 |
209: O3: F432 |
210: O4: F4132 |
216: Td2: F4-3m, F-43m |
219: Td5: F-43c |
225: Oh5: Fm-3m, Fm3m |
226: Oh6: Fm-3c, Fm3c |
227: Oh7: Fd-3m, Fd3m |
228: Oh8: Fd-3c, Fd3c |
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I (body-centered) lattices/I-centering & their space groups (only three crystal families) |
Orthorhombic |
|
|
|
|
|
|
|
23: D28: I222 |
24: D29: I212121 |
44: C2v20: Imm2, Im2m, Inn21, I2mm |
45: C2v21: Iba2, Ib2a, Icc21, Ic2a, I2aa, I2cb |
46: C2v22: Ima2, Ibm2, Ib2m, Im2a, Inc21, I2am, I2cm, I2ma, Pn2a |
71: D2h25: Immm, Innn |
72: D2h26: Ibam, Ibma, Iccn, Imaa, Imcb |
73: D2h27: Ibca, Icab |
74: D2h28: Imma, Ibmm, Imam, Imcm, Innb |
|
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Tetragonal |
|
|
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|
|
|
79: C45: I4 |
80: C46: I41 |
82: S42: I-4 |
87: C4h5: I4/m |
88: C4h6: I41/a |
97: D49: I422 |
98: D410: I4122 |
107: C4v9: I4mm |
108: C4v10: I4cm |
109: C4v11: I41md |
110: C4v12: I41cd |
119: D2d9: I-4m2 |
120: D2d10: I-4c2 |
121: D2d11: I-42m |
122: D2d12: I-42d |
139: D4h17: I4/mmm |
140: D4h18: I4/mcm |
141: D4h19: I41/amd |
142: D4h20: I41/acd |
|
|
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|
|
Cubic |
|
|
|
|
|
|
|
197: T3: I23 |
199: T5: I213 |
204: Th5: Im-3, Im3 |
206: Th7: Ia-3, Ia3 |
211: O5: I432 |
214: O8: I4132 |
217: Td3: I-43m |
220: Td6: I-43d |
229: Oh9: Im-3m, Im3m |
230: Oh10: Ia-3d, Ia3d |
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P (primitive) lattices & their space groups (all the seven crystal families) |
Triclinic |
|
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|
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|
|
1 : C11: P1, C1, I1 |
2: Ci1: P-1, A-1, B-1, C-1, F-1, I-1 |
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Monoclinic |
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3: C21: P2, P112 |
4: C22: P21, B21, C1121, P1121, P2111 |
6: Cs1: Pm |
7: Cs2: Pc, Bd, C11a, Pa, Pn, P11b, P11n |
10: C2h1: P2/m |
11: C2h2: P21/m, B21/m, P1121/m |
13: C2h4: P2/c, C112/b, P112/a, P112/b, P112/n, P2/a, P2/c11, P2/n |
14: C2h5: P21/c, B21/a, B21/c, B21/d, P1121/a, P1121/b, P1121/n, P21/a, P21/b11, P21/c11, P21/n, P21/n11 |
Orthorhombic |
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16: D21: P222 |
17: D22: P2221, P2122, P2212 |
18: D23: P21212, P21221, P22121 |
19: D24: P212121 |
25: C2v1: Pmm2, Pm2m, P2mm |
26: C2v2: Pmc21, Pb21m, Pcm21, Pm21b, P21am, P21ma |
27: C2v3: Pcc2, Pb2b, P2aa |
28: C2v4: Pma2, Pbm2, Pc2m, Pm2a, P2cm, P2mb |
29: C2v5: Pca21, Pbc21, P21ab, Pb21a, Pc21b, P21ca |
30: C2v6: Pnc2, Pb2n, Pcn2, Pn2b, P2an, P2na |
31: C2v7: Pmn21, Pm21n, Pnm21, Pn21m, P21mn, P21nm |
32: C2v8: Pba2, Pc2a, P2cb |
33: C2v9: Pna21, P21cn, Pbn21, Pc21n, Pn21a, P21nb |
34: C2v10: Pnn2, Pn2n, P2nn |
47: D2h1: Pmmm |
48: D2h2: Pnnn |
49: D2h3: Pccm, Pbmb, Pmaa |
50: D2h4: Pban, Pcna, Pncb |
51: D2h5: Pmma, Pbmm, Pcmm, Pmam, Pmcm, Pmmb |
52: D2h6: Pnna, Pbnn, Pcnn, Pnan, Pncn, Pnnb |
53: D2h7: Pmna, Pbmn, Pcnm, Pman, Pncm, Pnmb |
54: D2h8: Pcca, Pbaa, Pbab, Pbcb, Pcaa, Pccb |
55: D2h9: Pbam, Pcma, Pmcb |
56: D2h10: Pccn, Pbnb, Pnaa |
57: D2h11: Pbcm, Pbma, Pcam, Pcmb, Pmab, Pmca |
58: D2h12: Pnnm, Pmnn, Pnmn |
59: D2h13: Pmmn, Pmnm, Pnmm |
60: D2h14: Pbcn, Pbna, Pcan, Pcnb, Pnab, Pnca |
61: D2h15: Pbca, Pcab |
62: D2h16: Pnma, Pbnm, Pcmn, Pmcn, Pmnb, Pnam |
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Tetragonal |
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75: C41: P4 |
76: C42: P41 |
77: C43: P42 |
78: C44: P43 |
81: S41: P-4 |
83: C4h1: P4/m |
84: C4h2: P42/m |
85: C4h3: P4/n |
86: C4h4: P42/n |
89: D41: P422 |
90: D42: P4212 |
91: D43: P4122 |
92: D44: P41212, C41221 |
93: D45: P4222 |
94: D46: P42212 |
95: D47: P4322 |
96: D48: P43212 |
99: C4v1: P4mm |
100: C4v2: P4bm |
101: C4v3: P42cm |
102: C4v4: P42nm |
103: C4v5: P4cc |
104: C4v6: P4nc |
105: C4v7: P42mc |
106: C4v8: P42bc |
111: D2d1: P-42m |
112: D2d2: P-42c |
113: D2d3: P-421m |
114: D2d4: P-421c |
115: D2d5: P-4m2 |
116: D2d6: P-4c2 |
117: D2d7: P-4b2 |
118: D2d8: P-4n2 |
123: D4h1: P4/mmm |
124: D4h2: P4/mcc |
125: D4h3: P4/nbm |
126: D4h4: P4/nnc |
127: D4h5: P4/mbm, C4/mmb |
128: D4h6: P4/mnc |
129: D4h7: P4/nmm |
130: D4h8: P4/ncc |
131: D4h9: P42/mmc |
132: D4h10: P42/mcm |
133: D4h11: P42/nbc |
134: D4h12: P42/nnm |
135: D4h13: P42/mbc |
136: D4h14: P42/mnm |
137: D4h15: P42/nmc |
138: D4h16: P42/ncm |
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Trigonal |
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143: C31: P3 |
144: C32: P31 |
145: C33: P32 |
147: C3i1: P-3 |
149: D31: P312 |
150: D32: P321 |
151: D33: P3112 |
152: D34: P3121 |
153: D35: P3212 |
154: D36: P3221 |
156: C3v1: P3m1 |
157: C3v2: P31m |
158: C3v3: P3c1 |
159: C3v4: P31c |
162: D3d1: P-31m |
163: D3d2: P-31c |
164: D3d3: P-3m1 |
165: D3d4: P-3c1 |
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Hexagonal |
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168: C61: P6 |
169: C62: P61 |
170: C63: P65 |
171: C64: P62 |
172: C65: P64 |
173: C66: P63 |
174: C3h1: P-6 |
175: C6h1: P6/m |
176: C6h2: P63/m |
177: D61: P622 |
178: D62: P6122 |
179: D63: P6522 |
180: D64: P6222 |
181: D65: P6422 |
182: D66: P6322 |
183: C6v1: P6mm |
184: C6v2: P6cc |
185: C6v3: P63cm |
186: C6v4: P63mc |
187: D3h1: P-6m2 |
188: D3h2: P-6c2 |
189: D3h3: P-62m |
190: D3h4: P-62c |
191: D6h1: P6/mmm |
192: D6h2: P6/mcc |
193: D6h3: P63/mcm |
194: D6h4: P63/mmc |
P6m2 |
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Cubic |
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195: T1: P23 |
198: T4: P213 |
200: Th1: Pm-3 |
201: Th2: Pn-3 |
205: Th6: Pa-3, Pa3, Pb3 |
207: O1: P432 |
208: O2: P4232 |
212: O6: P4332 |
213: O7: P4132 |
215: Td1: P-43m |
218: Td4: P-43n |
221: Oh1: Pm-3m |
222: Oh2: Pn-3n |
223: Oh3: Pm-3n |
224: Oh4: Pn-3m |
|
R-centered lattices/R-centering & its space groups (only one crystal family) |
Trigonal |
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146: C34: R3, R3r |
148: C3i2: R-3, R-3r |
155: D37: R32, R32r |
160: C3v5: R3m, R3mr |
161: C3v6: R3c, R3cr |
166: D3d5: R-3m, R-3mr |
167: D3d6: R-3c, R-3cr |
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Others |
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P105/mmc |
Pm-35 |
Fm-35 |
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Space groups that have not been completely determined |
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Spacers in MOSFET structures |
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Spacing |
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Reciprocal lattice spacings |
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Real crystal spacings |
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Spacing of lattice of the seven crystal families |
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Spatial coherence/incoherence of electron source |
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Contribution of partial spatial coherence to diffractograms |
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Spatial coherence envelopes |
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Spatial frequency and its band in TEM imaging |
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Spatial frequencies in STEM imaging |
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Spatial drift & its correction in EFTEM imagings |
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EDS spatial resolution depending on EM sample thickness |
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EELS spatial resolution depending on specimen thickness |
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Spatial resolution of camera |
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Rayleigh criterion |
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Spatial resolution of EELS and EFTEM measurements |
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Spatial resolutions between various techniques |
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Spatial resolution of EELS in STEM mode |
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Spatial resolution of inelastic signals |
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Resolution in electron tomography |
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Resolution of cathodoluminescence technique |
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Degradation of EELS spatial resolution due to specimen drift |
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Diffractogram vs spatial resolution |
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Spatial resolution of EFTEM |
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Point resolution in EMs |
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Effect of chromatic aberration on spatial resolution in EMs |
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Spatial resolution of SEM |
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Spatial resolution of microscopes |
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Spatial resolution for light microscopes |
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Spatial resolution in EDS technique |
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Spatial resolution of STEM |
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Evaluation of spatial resolution in EMs |
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EM sample thickness dependence of spatial resolution |
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Methods for improving spatial resolution in EMs |
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Spatial resolution improved by increasing accelerating voltage in EMs |
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EM image simulations at high spatial resolutions |
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Spatial resolutions limited by specimen drifts |
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Spatial resolution of EFTEM mapping affected by chromatic aberration |
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Spatial resolution of EFTEM mapping affected by energy range |
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Spatial resolution of EFTEM mapping affected by collection angle |
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Spatial resolution of EBSD |
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Spatial resolution/beam spreading in STEM depending on convergence semiangle |
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Spatial resolution/resolving power affected by beam alignments |
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Spatial resolution affected by objective astigmatism |
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Effects of illumination coherence on spatial resolution in TEMs |
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Resolution of FIB milling |
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Spatial resolution in CBED measurements |
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Spatial resolution limit affected by aberrations |
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Scherzer expression/resolution/limit |
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Factors limiting spatial resolution on TEM |
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Resolution limit due to spherical aberration (Cs) |
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Resolution limit due to chromatic aberration (Cc) |
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Resolution limit of electron microscopes |
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Surpassing the resolution limit of EMs |
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Abbe's equation: resolution limit of microscopes |
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Determination of TEM spatial resolution |
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Effect of configuration of objective polepieces on STEM/TEM spatial resolution |
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Methods for improving spatial resolution in EMs |
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Spatial resolution improved by increasing accelerating voltage in EMs |
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Spatial resolution of TEM measured by Young’s fringe |
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Improvement of spatial resolution using aberration correction in EMs |
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TEM spatial resolution improved by defocus series |
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Improvement of TEM spatial resolution by image series reconstructions |
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EM image simulations at high spatial resolutions |
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Spatial resolution of electron holography |
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Spatially resolved EELS (SREELS) |
Specific heat and heat capacity of materials |
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Examples of FIB specifications |
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Spatial drift correction in EFTEM imagings |
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Spectrum-imaging (SI) based on EELS by STEM |
Spectroscopic amplifier in EDS system |
Spectrometers |
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Comparison of electron optics of various filters & spectrometers |
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Serial EELS spectrometer |
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In-column energy filters & spectrometers |
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Post-column energy filters & spectrometers |
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SIMS (secondary ion mass spectrometry) |
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Periodic table for EDS and EELS analysis |
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Speed considerations in EM analyses |
Speed and time related to electron microscopy and materials |
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Spherical aberration depending on working distance in SEM |
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Resolution limit due to spherical aberration (Cs) |
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Spherical aberration coefficient (Cs) |
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Benefit of low spherical aberration of objective lens |
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Determination of the spherical aberration and its coefficients |
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Phase shift from defocus and spherical aberration |
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Dependence of Cs and Cc aberrations on accelerating voltage of beam |
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Negative spherical aberrations |
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Longitudinal spherical aberration |
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Transverse spherical aberration |
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Spherical aberration affected by beam alignments |
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Spherical aberration in STEM |
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Spatial resolution of EFTEM mapping affected by spherical aberration |
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Spherical aberration rings in Ronchigram |
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Cs correction in SEM |
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Cs correction in TEM |
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Probe-forming Cs-corrector in STEM |
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Image-forming Cs-corrector |
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Interaction between chromatic and spherical aberration corrections |
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Ronchigram comparison between Cs-corrected and uncorrected STEM conditions |
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Third-order spherical aberration correction |
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Coupling between aberration corrector and objective lens |
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Multipole design for Cs correctors in EMs |
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Hexapole/sextupole/dodecapole design for Cs corrector in EMs |
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Dipole design for Cs corrector in EMs |
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Quadrupole design for Cs corrector in EMs |
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Octupole design for Cs corrector in EMs |
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Spin |
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Melt-spinning |
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Spinel (MgAl2O4) structures |
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Spherical projection |
Spiking/bridging failure in ICs |
Splitting |
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Phase-induced splitting of reflections in electron diffraction patterns |
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Splitting of HOLZ lines in CBED patterns |
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Direction of spontaneous polarization in ferroelectrics |
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Polarization in ferroelectrics measured by CBED in STEM mode |
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Evaluation of probe size in EMs |
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Dependence of electron probe/beam current on probe size in EMs |
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Spot size and shape limited by aberrations |
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Spray & beam defining apertures in FIB |
Spot mask annotation on Gatan DigitalMicrograph |
Spread of the kinetic electron energy |
Spreading |
Sputter ion pump (SIP) |
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Spurious |
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Spurious/artifacts x-rays in EDS measurements |
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Inaccuracy/artifacts in electron diffraction and spurious intensities |
Sputtering |
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Evaluation of sputtering cross section |
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Dependence of ionic sputtering on ionic energy |
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Ionic sputtering in FIB |
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Sputtering/etching threshold energies by energetic electron & ion beams |
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Introduction of ionic sputtering yields (in FIB & SIMS) |
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Sputtering & its yield of materials in electron microscopes |
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Preferential electron-beam etching of grain boundaries |
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Coating of TEM specimen to reduce beam damage & sputtering |
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Cross-sections of surface sputtering/knock-on induced by electron irradiation (sputtering cross section) |
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Sputtering/knock-on of atoms from beam-exit surface of TEM sample |
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Atom loss during EM measurements |
Square |
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Square symmetry in electron diffraction patterns |
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Stability |
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Energy stability of EELS |
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Electrical stability of EM systems |
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Instability in accelerating voltage of electron beam |
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Instability of TEM imaging due to specimen charging |
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Stability of ferroelectrics related to oxygen vacancies |
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TEM imaging of stacking faults |
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Stacking fault energy of crystals |
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Determination of displacement vector of stacking fault |
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Visibility/contrast of dislocations and stacking faults in TEM and EMs |
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Stacking faults, twins and dislocations in silicon |
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Stacking fault energy of crystals |
Standard deviation of the Gaussian distribution of defocus due to the chromatic aberration |
Standard focus/Eucentric height versus sample tilt in TEM |
Standby power for mobile devices |
Staining/dopant-selective etching in IC analysis |
Staining in analysis of biological materials |
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Static dielectric constants |
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Failure of static random-access memory (SRAM) |
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Steels |
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Analytical electron microscopy (STEM/TEM) |
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Examples of SEM/STEM systems |
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Imaging geometries of TEM and STEM systems |
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Tilt HAAD STEM tomography |
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Three-dimensional sectioning of specimens using STEM |
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X-ray detector & EDS comparison in SEM/TEM/STEM |
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Defect analysis by TEM/STEM |
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Interface analysis by TEM/STEM |
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Low dose TEM/STEM imaging |
|
Examples of TEM/STEM systems |
STEM mode |
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Aberration and its correction in STEM mode |
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Cs correction in STEM |
|
Comparison between CTEM and STEM |
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Spherical aberration in STEM |
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Beam spreading in STEM caused by chromatic aberration |
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Astigmatism in STEMs |
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Virtual objective aperture (VOA) in TEM/STEM |
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Objective lens in SEMs/STEMs |
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Optimal convergence semi-angle in STEM |
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Measurements of convergence semi-angle in STEM and CBED |
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Spatial resolution/beam spreading in STEM depending on convergence semiangle |
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Dependence of electron probe/beam current on probe size in EMs |
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Probe shift in TEM system when switching between STEM and other modes |
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Maximum usable illumination angle in STEM |
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STEM alignment with Ronchigram |
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STEM imaging affected by accelerating voltage of electron beam |
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Annular dark-field (ADF) scanning transmission electron microscopy (STEM) |
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Low-angle annular dark field (LAADF) STEM |
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Defocus series in STEM imaging |
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STEM/TEM imaging with incoherent electrons |
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Phase shift of electrons depending on scattering angle in TEM/STEM |
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Electronic noise in TEM/STEM/SEM/EELS/EDS systems |
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Image localization in STEM |
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Minimum attainable probe size in STEM |
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Theoretical interpretation of STEM/TEM images about crystalline defects |
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Theoretical interpretation of STEM/TEM images about crystalline surface |
|
In Situ TEM/STEM |
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In Situ liquid TEM/STEM analysis |
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Liquid TEM and STEM stage and holder |
|
Polarization in ferroelectrics measured by CBED in STEM mode |
STEM: Wavefunction & intensity |
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Contrast transfer function (CTF) in STEM |
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Sensitivity of STEM contrast to focus |
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Purity of Z-contrast in HAADF-STEM (removing diffraction contrast) |
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Intensity/signal comparison between STEM and CTEM |
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Simulation of HAADF-STEM images |
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Wavefunction of focused probe in STEM/SEM |
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Wavefunction affected by aberrations in STEM |
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Exit wavefunction & intensity from STEM specimen |
|
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Artifacts in HRSTEM imaging |
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Effects of amorphous layer and specimen thickness on high resolution STEM images |
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HRSTEM image contrast as function of crystal tilt |
|
HRSTEM image contrast as function of defocus |
|
|
Spectrum-imaging (SI) by STEM |
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Scan speed/Dwell time in TEM/STEM imaging |
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Objective/probe-forming aperture for STEM imaging |
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Wobbler for high tension in TEM/STEM |
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Streaking/noise artifact in TEM/STEM images |
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Wobbler for condenser lens excitation in TEM/STEM |
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General thickness requirements of TEM samples for EELS/EFTEM/STEM |
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STEM image contrast |
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Contrast reversal of bright field TEM/STEM images |
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Contrast analysis of HAADF-STEM images |
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HRSTEM image contrast as function of crystal tilt |
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HRSTEM image contrast as function of defocus |
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Dependence of BF/ADF-STEM intensity on specimen thickness |
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Atomic contrast (Z-contrast) by HAADF |
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ADF(HAADF)-STEM contrast at interfaces |
|
Contrast reversal in HAADF imaging |
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Contrast & intensity in annular dark field (ADF) STEM images
|
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Fraction of electrons scattered onto an ADF detector |
STEM data analysis |
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Removal of sample thickness variations in STEM data analysis |
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Noise in STEM imaging |
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Comparison between TEM and STEM bright field imagings |
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Electron stereographic projection/stereogram for crystals |
|
Relationship between electron diffraction patterns and stereographic projections |
|
Wulff net |
|
Polar net |
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Stereographic projection for cubic crystals |
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Angle between two planes/plane normals/poles measured by Wulff net |
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Pole (plane normal) in electron stereographic projection |
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Stigmators/astigmatism |
Sticking coefficient |
Stock: EM companies in stock markets |
Stobbs factor in TEM imaging |
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Electron stopping power |
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Collision (ionization) stopping power |
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Mass stopping power |
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Radiative stopping power |
Stopper |
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Beam stopper in TEM |
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Storage |
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Optical storage |
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Void formation by Nabarro–Herring creep |
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Stress distribution around silicides |
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Electrons/holes mobility & current versus strain in materials |
|
Strain in ferroelectric materials |
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Stress/strain fields at interfaces |
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Strain/stress analysis with STEM |
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Strain/stress analysis with HR-(S)TEM |
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Strain/stress measurement using electron diffraction |
|
Strain/stress analysis using CBED |
|
Strain measurement with (scanning) nanobeam diffraction ((Scanning)-NBD) |
|
Determination of lattice parameters/strain by plasmon EELS |
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Strain analysis using electron holography |
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Strain/stress analysis using EBSD |
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TEM/STEM holders for strain analysis |
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Stress-redistribution-induced film bending due to FIB irradiation |
|
Stray radiation in EMs |
Stray aperture in EMs |
Stray magnetic field |
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Fluctuation of stray magnetic fields |
|
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Streaking |
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Streaking artifacts in EELS images or profiles |
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Streak imaging technique in EELS measurements |
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Streaks formed by smearing/blooming in CCD camera |
|
Streaking artefacts in FFTs of TEM images |
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Streaks in electron diffraction patterns |
|
Diffuse scattering in electron diffraction due to crystalline disorder |
|
Streaking artifacts in TIVA and OBIRCH images |
|
Streaking/noise artifact in TEM/STEM images |
Strength |
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Strength of lenses in EMs |
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Strength of diatomic bond/bond energy |
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Grain boundary strength |
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Strip width in integrated circuits (IC) |
|
Strontium |
|
EDS measurement of strontium (Sr) |
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|
|
Doped and undoped strontium titanate (SrTiO3 ) |
|
Superlattice of SrTiO3 and LaTiO3 |
|
SrZrO3 |
|
Ca1-xSrxTiO3 |
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Atomic-number contrast of Sr ions |
|
Sr1-pCr2X4-p (X = S, Se) |
Structure |
|
Table of structural properties of materials |
|
Structure factor and HRTEM |
|
Structure Factor Fhkl |
|
Structure function and structure factor |
|
Strukturbericht |
State: Oxidation states (oxidation number, degree of oxidation) in periodic table |
Substitution |
|
Space group/crystal structure depending on substitution concentration |
|
|
Substrate |
|
Selection of substrate direction for ICs |
|
|
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Sum peaks in x-ray/EDS profiles |
|
|
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EDS/WDS measurements of sulfur (S) |
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|
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La1.2CrS3.2 |
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ZnSSe-based/GaAs heterostructures |
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A1-pCr2S4-p (A = Ba, Sr, Eu, Pb) |
|
Misfit layer chalcogenides: (AX)1+δ(BX2)n (A = rare earth/Sn/Pb/Sb/Bi; B = Ti/V/Cr/Nb/Ta; X = S/Se) |
|
SF6 and its application in EMs |
|
|
Surface |
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Energy of atoms at surface |
|
Difference of atomic structure between surface, interface, and bulk |
|
Surface plasmons formed in thin specimen in EMs |
|
Surface reconstruction |
|
Surface & bulk plasmon energy in EELS (table) |
|
EELS detection of molecularly adsorbed species on surfaces |
|
Surface & bulk plasmon energy in EELS (theory) |
|
Theoretical interpretation of STEM/TEM images about crystalline surface |
|
Number of atoms at surface of and in nanoparticles |
|
Surface energies of solids |
|
Diffusion/diffusivity of elements through surfaces |
|
(Maximum) escape depth of secondary electrons and its surface sensitivity |
Surface potential |
|
Surface potential at sample surface induced by electron irradiation (e.g. in SEM) |
|
|
|
Supercells and subcells of crystals |
|
Superconductor |
|
Superconducting lens for EMs |
|
Properties of superconductive materials |
Superlattices |
|
Superlattice of SrTiO3 and LaTiO3 |
|
Twofold superstructure |
|
Weak spots related to superstructures in electron diffractions |
|
|
|
Super pixel/binning/binned pixel in CCD |
Suppressor (of beam) in FIB |
Switching valves |
Symmetric immersion lens as objective lens in SEM systems |
Synchrotron X-ray Diffraction |
|
|
|
Symmetry groups for the crystal systems
|
|
Rotation axis (1, 2, 3, 4 and 6 (Cn)) in crystallography |
|
Determination of crystal symmetry |
|
CBED pattern symmetries for crystal determination |
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2mm symmetry |
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4mm symmetry in electron diffraction patterns |
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8mm symmetry |
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12mm symmetry |
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Center of inversion (center of symmetry, i) |
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Non-centrosymmetric space groups |
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Centrosymmetric space groups |
Symmetry: Three symmetry elements for point group definition |
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Mirror planes (m, σ) in crystallography |
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Rotation axis (1, 2, 3, 4 and 6 (Cn)) in crystallography |
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Rotoinversion axis (-4, S4) in crystallography |
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