Table of Contents/Index
Chapter/Index:
Introduction |
A | B |
C |
D |
E |
F |
G |
H |
I |
J |
K |
L |
M |
N |
O |
P |
Q |
R |
S |
T |
U |
V |
W |
X |
Y |
Z |
Appendix
| t2g & eg symmetries/states |
Tags on Gatan Digital Micrograph |
| Tabletop/desktop/portable SEM |
Take-off angle in EDS system |
| Taylor and Maclaurin series |
Taylor cone |
| Tantalum (Ta) |
Copper (Cu) interconnects with tantalum (Ta) barrier |
| EDS measurement of tantalum (Ta) |
Ta2O5 |
| TaSiNx |
TaSix |
| TaN |
Misfit layer chalcogenides: (AX)1+δ(BX2)n (A = rare earth/Sn/Pb/Sb/Bi; B = Ti/V/Cr/Nb/Ta; X = S/Se) |
| Techniques for material characterizations |
| Techniques in electron microscopes |
Techniques for dopant profiling in semiconductors |
| Analysis techniques for ferroelectric materials |
Spatial resolutions between various techniques |
| Techniques of physical failure analysis (PFA) for ICs |
Techniques used to detect/measure charges in EM samples |
| Techniques for silicides' analysis |
| Television (TV) camera for EMs |
| Tellurium (Te) |
| EELS of tellurium (Te) |
GexSbyTez (GST) |
| Te-X phase diagrams |
Te-based metallic-glass alloys |
| TEM/Conventional TEM (CTEM) |
| Comparison between CTEM and STEM |
Comparison of TEM and SEM |
| Comparison among TEM, APT, ToF SIMS and ICP-MS |
ExSolve Wafer TEM Prep DualBeam, TEMLink and Thermo Fisher Metrios TEM |
| ExSolve Wafer TEM Prep DualBeam |
|
| Applications of TEM-related techniques |
Defocus in TEM imaging |
| EELS and quantitative analysis in TEM imaging mode |
Instability of TEM imaging due to specimen charging |
| Hybrid TEMs |
Schematic diagram of TEM systems |
| Aberration correction in CTEM |
Cs corrector in TEM |
| Position of parts in TEM system |
Phonon effect on TEM imaging |
| Imaging geometries of TEM and STEM systems |
Wavefunction affected by aberrations in CTEM |
| Underfocusing objective lens in TEMs |
Image shift/drift in TEM |
| Intensity/signal comparison between STEM and CTEM |
Virtual objective aperture (VOA) in TEM/STEM |
| Probe shift in TEM system when switching between TEM and other modes |
TEM experimental determination of lattice parameters |
| TEM image processing and deconvolution |
History of TEM |
| Interpretation of TEM/STEM Images |
Diffraction contrast in TEM images |
| Ultrahigh voltage TEMs |
Optimized low voltage EMs for high performances |
| Caustic image in TEM |
Diffraction pattern formed in imaging condition/image plane/objective plane |
| Electron-beam-tilt-induced image displacement in TEM |
Electron-beam-tilt-induced coma in TEM |
| Contrast transfer function (CTF, Phase CTF, or PCTF) |
Modulation Transfer Function (MTF) of detectors in EM |
| STEM/TEM imaging with incoherent electrons |
|
| Stobbs factor in TEM imaging |
Background contrast in TEM/STEM images |
| Phase shift of electrons depending on scattering angle in TEM/STEM |
TEM modeling/simulation |
| Phase-contrast in TEM images |
TEM designs for biological applications |
| FEI TEMs |
JEOL TEMs |
| TEM imaging on biological materials |
Focusing in TEM imaging |
| Hysteresis factor in TEMs |
Magnification and its adjustment in TEM |
| Comparison of lens conditions between TEM diffraction and TEM imaging modes |
Goniometer stage in TEMs/STEMs |
| Sample damage in TEM measurements |
Electronic noise in TEM/STEM/SEM/EELS/EDS systems |
| Signal-to-noise ratio in TEM/STEM images |
In Situ TEM/STEM |
| In Situ liquid TEM/STEM analysis |
Liquid TEM and STEM stage and holder |
| Lorentz lens for TEMs |
EELS measurements in TEM imaging mode |
| Advantages and disadvantages of low voltage TEM and STEM |
Advantages and disadvantages of TEM-related techniques |
| Manufacturers/companies producing FIB & EM instruments |
Installation/room/environment of EM systems |
| Angular distribution of signal/information from TEM measurements |
Voltage axis in TEM |
| Cryogenic transmission electron microscopy (cryo-TEM) |
Practical beam current of STEM technique in TEM |
| TEM operation |
| JEOL 2100 TEM operation manual |
FEI TEM operation manuals |
| Image-shift function and its lens in TEM |
Acquisition of STEM images/STEM operation |
| Alignments |
Optical condition for high-magnification imaging in TEM |
| Voltage centering in TEM |
Current centering in TEM |
| Tilt of electron beam in EMs |
Autofocus methods in TEM imaging |
| Anode wobbler in TEM |
Streaking artifact in TEM/STEM images |
| Challenges of TEM analysis on nanoparticles |
Difficulties/challenges: advanced TEM-related measurements for semiconductor failure analyses |
| Scan speed/dwell time of detectors and cameras in TEM/STEM imaging and elemental mapping |
Accuracy of CD (critical dimension) measurements using TEM |
| TEM analysis of defects in amorphous materials |
TEM specimen preparation for defect analysis in amorphous materials
|
TEM analysis of short range ordering in amorphous materials |
| In situ FIB lift-out TEM sample preparation |
Voids generated during TEM sample preparation |
| TEM analysis of particular materials |
| TEM analysis of metallic materials |
TEM analysis of ceramics |
| TEM analysis of catalysts |
Defect analysis by TEM/STEM |
| Interface analysis by TEM/STEM |
| TEM: Image contrast |
| Comparison between TEM and STEM bright field imagings |
Dependence of image contrast on accelerating voltage in TEM/STEM |
| TEM contrast and underfocus/defocus |
Contrast reversal of bright field TEM/STEM images |
| Diffraction contrast in TEM images |
TEM contrast/fringes at interface between two materials |
| In-focus in TEM imaging |
Fresnel fringes in TEM images |
| TEM contrast limit of chemical elements |
Contrast delocalization/blurring effect in TEM images |
| TEM detection limit of bubble/void/holes in materials |
TEM/HRTEM contrast of bubble/void/holes in materials |
| Mass-thickness contrast in TEM images |
Mass-thickness contrast in STEM Images |
| TEM Sample |
| Basic requirements of TEM specimen |
TEM sample thickness satisfying weak phase criterion |
| TEM sample thickness for STEM and EELS ~ Mean Free Path |
Diffraction pattern formed in objective plane |
| Secondary electrons emitted from TEM thin film |
Sample location in TEM system |
| Double cross-sections for examination of damage of prepared EM sample surface |
Thin TEM sample to avoid multiple/plural scattering |
| Biological TEM specimen |
Poor TEM sample quality limiting data interpretation |
| Poor TEM sample quality limiting quantitative analysis |
Theoretical model for TEM samples |
| Sample storage in TEMs and operation time reduction |
Argon implantation occurring in TEM sample milling process |
| Dependence of single and multiple inelastical scatterings of electrons on TEM sample thickness |
CBED Kikuchi pattern contrast depending on samples thickness |
| Mechanical vibration/thermal effects on EMs: e.g. sample drift |
Avoid damaging fragile TEM samples |
| Phase shift of incident electrons induced by TEM specimen |
Image rotation in EMs |
| Wobbler for condenser lens excitation in TEM/STEM |
TEM film thickness dependence of Fresnel fringes |
| Wobbler for high tension in TEM/STEM |
Object plane (sample plane) of objective lens |
| Damage of TEM specimen holder |
Effects of amorphous layer and specimen thickness on high resolution STEM images |
| Dynamical scattering of electrons in thick TEM specimen |
Projected potential model for TEM specimens |
|
TEM/STEM specimen holders |
Applications of wedge-shaped TEM specimen in EM analysis |
| Electron beam damage depending on TEM/SEM specimen thickness |
Elastic relaxation due to TEM-specimen thinning |
| TEM/STEM holders for in-situ synthesis and characterizations |
Specimen (stage) drift/instability/movement in TEMs/STEMs |
| Step size used for beam damage reduction during elemental mapping |
Electron scattering within TEM specimen |
| Electron absorption EM specimen (& thickness dependence) |
Fraction of transmitted electrons depending on sample thickness |
| TEM sample height in TEM system |
| Change of image due to change of TEM sample height |
Change of diffraction pattern due to change of TEM sample height |
| Defocus effect due to change of TEM sample height |
TEM specimen traverse induced by specimen tilt |
TEM specimen traverse induced by beam tilt
|
| TEM sample preparations |
| Coating of TEM specimen to reduce beam damage & sputtering |
Carbon coating on TEM samples – to avoid charging effect |
| Extremely high quality TEM/STEM sample preparation |
Electropolishing for TEM sample preparation |
| TEM specimen preparation by crushing bulk crystals |
TEM specimen preparation by chemical etching |
| TEM specimen preparation for defect analysis in amorphous materials |
Ultrathin specimen preparation by low-energy Ar-ion milling |
| TEM sample preparation for atomic short-range ordering analysis |
TEM specimen requirements in semiconductor industry |
| Methanol applied in TEM sample preparation |
TEM specimen grids for EDS analysis |
| Wedge polishing method for TEM specimen preparation |
Microtome for specimen-sectioning |
| High pressure freezing (HPF) for TEM sample preparation |
Argon milling for TEM specimen preparation |
| TEM sample preparation by FIB |
| Advantages and disadvantages of FIB technology for EM sample preparations |
Curtain effect in FIB-EM sample preparation |
| Mounting of TEM grid in grid-holder of FIB system |
Plasma cleaning of FIB prepared specimens |
| Temperature increase/heat generation in TEM sample preparation by FIB |
Temperature increase/heat generation in FIB deposition |
| Tungsten deposition by FIB |
Requirements and preparation of nano-particles TEM samples |
| Ultra-thin TEM specimens prepared by FIB milling |
Large uniform-thickness FIB-TEM specimen preparation |
| Cryo-focused ion beam-SEM (FIB-SEM) |
Polymer TEM sample preparation |
| TEM sample preparation by ion milling |
|
| Preferential ion milling at grain boundaries |
TEM sample preparation method of mechanical polishing + ion milling |
| Cryo-preparations of TEM specimens |
| Cryo-focused ion beam-SEM (FIB-SEM) |
| TEM specimen contamination |
|
| Hydrocarbon (HC) and carbon contamination of EM specimens |
Carbon contamination effects on EELS measurements & its reduction |
| Cold trap to prevent contamination of TEM specimen |
Electron beam flooding/beam shower to eliminate contamination effects in EMs |
| Electron Beam Testing (EBT) |
|
| TEM simulations |
|
| Multislice simulation (MS) of TEM images |
|
| TEM: Analytical electron microscopy (STEM/TEM) |
|
| HRTEM (High Resolution TEM) and its improvement |
Bright-field (BF) imaging in TEM |
| Selected-area electron diffraction (SAED) in TEM |
Dark-field (BF) imaging in TEM |
| convergent beam diffraction (CBED) |
Electron energy loss spectra (EELS) |
| Energy dispersive X-ray spectra (EDS) |
Best TEM imaging conditions |
| Image contrast in aberration-corrected EMs |
Different TEM techniques for crystalline grains in various sizes |
| TEM techniques for failure analysis of IC devices |
|
| Low dose TEM/STEM imaging |
Dislocation formation during TEM observation |
| TEM examples |
| Examples of TEM/STEM systems/models |
TEM analysis of magnetic materials |
| TEM 3D (three-dimensional) tomography | Sample preparation for tomography in TEM |
| Types of electron tomography rotation/tilt schemes |
Reconstructing a three-dimensional (3D) image from 2D images in STEM tomography |
| Tilt tomography in TEM and STEM |
Single particle analysis |
| Tilt HAAD STEM tomography |
Crystal growth in ICs studied by electron tomography |
| Confocal/focal series STEM |
Tilt azimuth restorations in TEM imaging |
| Resolution in electron tomography |
Artifact in electron tomography |
| Temporal coherence/incoherence in EMs |
| Temporal coherence/incoherence of electron source |
Contribution of partial temporal coherence to diffractograms |
| Temporal-coherence envelope function |
| Temperature |
| Operating temperature in electron guns |
Temperature dependence of unit cell volume in crystals |
| Melting/temperature rise of materials in FIB processes |
Operating temperature of CCD cameras |
| Heating temperature of electron guns |
| Temperature rise/heating induced by ion and electron beams |
| Temperature rise in STEM measurement |
Temperature increase/heat generation by electron irradiation |
| Temperature increase/heat generation in TEM sample preparation by FIB |
Temperature increase/heat generation in FIB deposition |
| Ternary tungsten oxides |
Telegram chat groups for electron microscopy, materials and biology |
| Telegram:
results of electron microscopy survey |
Tetrahedral lattices |
| Tetrahedral structure in amorphous materials |
Text annotation on Gatan DigitalMicrograph |
| Tetragonal (Td) crystals |
| Palladium oxide (PdO) |
4/m point group |
| 4 point group |
-4 point group |
| 422 point group |
-42m point group |
| 4mm point group |
4/mmm point group |
| Comparison between hexagonal and tetragonal (or orthorhombic) cells |
| Tetragonal space groups |
| I (body-centered) lattices/I-centering & their space groups |
| I4 (79) |
I41 (80) |
| I-4 (82) |
I4/m (87) |
| I41/a (88) |
I422 (97) |
| I4122 (98) |
I4mm (107) |
| I4cm (108) |
I41md (109) |
| I41cd (110) |
I-4m2 (119) |
| I-4c2 (120) |
I-42m (121) |
| I-42d (122) |
I4/mmm (139) |
| I4/mcm (140) |
I41/amd (141) |
| I41/acd (142) |
| P (primitive) lattices & their space groups |
| P4 (75) |
P41 (76) |
| P42 (77) |
P43 (78) |
| P-4 (81) |
P4/m (83) |
| P42/m (84) |
P4/n (85) |
| P42/n (86) |
P422 (89) |
| P4212 (90) |
P4122 (91) |
| P41212 (92) |
P4222 (93) |
| P42212 (94) |
P4322 (95) |
| P43212 (96) |
P4mm (99) |
| P4bm (100) |
P42cm (101) |
| P42nm (102) |
P4cc (103) |
| P4nc (104) |
P42mc (105) |
| P42bc (106) |
P-42m (111) |
| P-42c (112) |
P-421m (113) |
| P-421c (114) |
P-4m2 (115) |
| P-4c2 (116) |
P-4b2 (117) |
| P-4n2 (118) |
P4/mmm (123) |
| P4/mcc (124) |
P4/nbm (125) |
| P4/nnc (126) |
P4/mbm (127) |
| P4/mnc (128) |
P4/nmm (129) |
| P4/ncc (130) |
P42/mmc (131) |
| P42/mcm (132) |
P42/nbc (133) |
| P42/nnm (134) |
P42/mbc (135) |
| P42/mnm (136) |
P42/nmc (137) |
| P42/ncm (138) |
| Tetragonal tungsten bronze (TTB) |
Thermal e-h Pair |
| Thermal conductivity |
| Thermal conductivity measurements |
Table of thermal conductivities of materials |
| Thermal expansion coefficients |
| Anisotropy of thermal expansion coefficients due to defects |
Thermal expansion measurements |
| Incoherent thermal diffuse scattering (TDS) electrons in (S)TEM |
| Thermal diffuse (quasi-elastically) scattering (TDS) & HAADF |
Thermal-diffuse-scattering in in-situ heating HAADF-STEM |
| Energy filter applied to observation of thermal-diffuse streaks in electron diffractions |
Inelastical phonon excitation & thermal diffuse scattering (TDS) of electrons in EMs |
| Dependence of thermal diffuse scattering on atomic number |
Thermal oxidation of silicon |
| Thermionic electron emission guns |
Key Geometric, Materials, Thermal, and Electrical Tolerances in SEM |
| Comparison between different electron sources/guns |
| Tungsten electron gun |
LaB6 electron guns |
| Thermionic emission |
Thermo-plastic expansion induced film bending due to FIB irradiation |
| ExSolve Wafer TEM Prep DualBeam, TEMLink and Thermo Fisher Metrios TEM |
Thermo Fisher Metrios TEM |
| Thermoelectric power and thermocouple |
Thermal FEG |
| Thermogravimetric analysis (TGA) |
Thermionic electron emission guns |
| Thermoelectric (Peltier) cooling |
| Thickness of EM samples |
| Thickness requirements of TEM samples for EELS/EFTEM/HAADF STEM |
Contribution of specimen thickness to diffractograms |
| EELS artifacts from ultra-thin TEM specimens - surface effects |
Dependence of signal types on sample thickness in EMs |
| Advantages and disadvantages between thin and thick/bulk sample in EMs |
EM sample thickness dependence of spatial resolution |
| EDS spatial resolution depending on EM sample thickness |
k-factor/ZAF correction due to sample thickness effect (x-ray absorption) |
| Sample thickness dependence of TEM image intensity/contrast |
Mass-thickness contrast in TEM images |
| Spatial resolution of EFTEM affected by specimen thickness |
TEM sample thickness determination by electron holography |
| Film thickness determination by X-ray reflectivity/interference |
Optimization of specimen thickness for strain analysis by CBED |
| Optimization of specimen thickness for electron holography analysis |
Dependence of EELS signal on TEM specimen thickness |
| Dependence of observable thickness on accelerating voltage in TEM/STEM |
EELS spatial resolution depending on specimen thickness |
| Intensity of backscattering electrons (BSEs) depending on TEM sample thickness |
Thickness correction of EFTEM and EELS measurements |
| Thickness determination of TEM/STEM samples |
| Sample thickness determination using CBED |
Sample thickness determination using EELS/FETEM |
| Diffraction of thick TEM specimen |
Parallax (film thickness) measurements |
| TEM/STEM film thickness measurements based on contamination spots |
TEM sample thickness determination through diffraction |
| Overall electron diffraction and Kikuchi lines depending on TEM sample thickness |
TEM sample thickness determination by thickness fringes: extinction distance |
| Dependence of BF/ADF-STEM intensity on specimen thickness |
| Thin-film approximations |
| Thin-foil criterion (thin-film approximation) in EDS measurement |
| Thon rings in bright-filed imaging |
| Third order aberrations |
| Third-order star aberration |
Third-order spherical aberration correction |
| Thorium (Th) |
| EDS measurement of thorium (Th) |
| Three |
| Determination of threefold astigmatism in TEM measurements |
Three-window method for EFTEM/EELS elemental mapping/quantification |
| Three-fold symmetry of electromagnetic fields |
Threefold astigmatism of objective lens in TEM |
| Three-dimensional sectioning of specimens using STEM |
3D effect and relevant correction in EDS quantification |
| Three-dimensional (3-D) lattice |
Three-fold axis in crystals |
| Rotation method for three dimensional (3D) electron diffraction recording |
| Threading dislocation (TD) |
Throughput limiting factors in TEM observations |
| Through-the-lens (in-lens/immersion lens) SEM detectors |
Throughput in E-beam Inspection |
| Tilt |
| Beam-tilt induced effects in TEM |
Sample-tilt induced effects in TEM |
| Tilt tomography in TEM and STEM |
Diffraction variation due to TEM sample tilt |
| Accuracies of beam tilt & of alignment of zone axis |
Tilt of electron beam in EMs |
| Alignment of zone axis following Kikuchi lines by tilting EM samples |
Electron-beam-tilt-induced image displacement in TEM |
| Zemlin tableaus method |
Gun-alignment coil control system/gun shift and tilt in EMs |
| HRSTEM image contrast as function of crystal tilt |
HRSEM image contrast as function of crystal tilt |
| Standard focus/Eucentric height versus sample tilt in TEM |
Beam tilt in aberration corrected TEM |
| Wobbler for coma-free alignment with beam tilt |
Tilt & shift and their purities/pivot point/rocking point in TEM |
TEM specimen traverse induced by beam tilt
|
TEM specimen traverse induced by specimen tilt |
| Maximum achievable sample-tilt-angle in TEM |
Beam tilt with dark-field deflection coils |
| Specimen quality depending on sample tilting in FIB |
| Time |
| Time of occurrence of various physical and chemical phenomena |
Responding time of Auger electron emission for electron irradiation |
| Responding time of SE emission for electron irradiation |
Responding time of photon emission for electron irradiation |
| Responding time of phonon emission for electron irradiation |
Time constant/peaking time/shaping time of EDS amplifier |
| Time to electromigration-induced failures |
Comparison of data acquisition times of various techniques |
| EDS acquisition time |
Speed and time related to electron microscopy and materials |
| Tin (Sn) |
EELS of tin (Sn)
|
Cu2ZnSnSe4 |
| Extinctions and weak spots showing in electron diffraction patterns of tin (Sn) |
Misfit layer chalcogenides: (AX)1+δ(BX2)n (A = rare earth/Sn/Pb/Sb/Bi; B = Ti/V/Cr/Nb/Ta; X = S/Se) |
| La2CuSnO6 |
SiSn |
| Sn-based metallic-glass alloys |
X-Sn alloys |
| Titanium (Ti) |
| Doped and undoped BaTiO3 |
CaTiO3 |
| Atomic-number contrast of Ti ions |
Doped and undoped strontium titanate (SrTiO3 ) |
| Lanthanum titanate (LaTiO3) |
Superlattice of SrTiO3 and LaTiO3 |
TMO6 (e.g. TiO6) octahedral lattice
|
Titanium in ICs |
| Misfit layer chalcogenides: (AX)1+δ(BX2)n (A = rare earth/Sn/Pb/Sb/Bi; B = Ti/V/Cr/Nb/Ta; X = S/Se) |
PbTiO3 |
| Titanium nitride (Ti2N/TiN) |
Al/Ti/W/TiN stack used for VLSI |
| X-Ti phase diagrams |
TiO2 |
| TiCl4-Ether complex |
Ti-W alloy |
| Ca1-xSrxTiO3 |
| CuxZryTiz |
Ti-based metallic-glass alloys |
| EDS and WDS measurements of titanium |
EELS of titanium |
| Tomographic properties of SEM and dual-beam techniques |
Top-entry and side-entry lens in TEM systems |
| Top-entry type EDS detector |
Top-entry goniometer stages/holders in TEMs/STEMs |
| Top-hat filtering and bottom-hat filtering |
Top-hat filter for EELS |
| Topographic contrast (sharpness) in SEM |
| Topographic contrast (sharpness) depending on beam energy in SEM |
Topographic contrast (sharpness) affected by the detector position in SEM |
| Total correction function |
Total, partial and integral cross-sections for inner-shell ionization |
| Trace, major, minor elements in materials |
| Trajectories |
| Trajectory of secondary electrons |
Trajectories of electron in electron lenses |
| Trajectories of incident high-energy electrons in materials |
| Transducers |
| Transducer of light to electrical signal |
| Transformation |
| Martensitic transformation |
| |
| Transmitted electron beam intensity in TEM |
Transmission probability of secondary electrons across surface potential to vacuum |
| Transition |
| Metal-insulator transition (MIT) with change of temperature |
Interband transitions |
| Transition probability from initial state to final state |
Possible electron transitions giving rise to characteristic X-rays |
| EELS transitions |
AES transitions |
| Driving force for the phase transition in materials |
Dipole transitions in electron excitations |
| Transition temperatures of multiple phases |
Reduced glass transition temperature |
| Glass transition of metallic glasses |
| Transition metal |
| Transition metals in Periodic table |
TMO6 octahedral lattice |
| 3d transition metal |
Transition-metal complexes |
| Precipitation of transition metals |
| Translational symmetries (Space group) |
| Glide planes |
Screw-axis |
| Traps |
| Electron traps in electron microscopy (EM)-related system |
Deep level traps and charged defects in materials |
| Trapping pumps/Entrainment pumps |
| Transverse spherical aberration |
Trench structures |
| Triangular lattice |
| Triclinic crystals |
| 1 point group |
-1 point group |
| Triclinic space groups |
| P (primitive) lattices & their space groups |
| P1 (1) |
P-1 (2) |
| Trigonal crystals |
| HRTEM and electron diffraction of crystals with trigonal symmetry |
Indexing of trigonal and hexagonal systems |
| 321 point group |
-3m1 point group |
| Trigonal space groups |
| R-centered lattices/R-centering & its space groups |
| R3 (146) |
R-3 (148) |
| R32 (155) |
R3m (160) |
| R3c (161) |
R-3m (166) |
| R-3c (167) |
| P (primitive) lattices & their space groups |
| P3 (143) |
P31 (144) |
| P32 (145) |
P-3 (147) |
| P312 (149) |
P321 (150) |
| P3112 (151) |
P3121 (152) |
| P3212 (153) |
P3221 (154) |
| P3m1 (156) |
P31m (157) |
| P3c1 (158) |
P31c (159) |
| P-31m (162) |
P-31c (163) |
| P-3m1 (164) |
P-3c1 (165) |
| Triple twinning |
| Troubleshooting of EM-related systems |
| Troubleshooting of cathodoluminescence systems |
Troubleshooting of DigiScan systems |
| Troubleshooting of microscope computers |
| Troubleshooting of EELS/GIF measurements/systems |
| Gain variations |
High energy loss |
| Thin TEM/STEM specimen |
Troubleshooting of Gatan hardware and software |
| No GIF images/spectra |
Troubleshooting related to GIF software and hardware |
| Troubleshooting of SEM imaging |
| Source of secondary electrons |
Source of Backscattering Electrons |
| Tungsten |
| Tungsten deposition by FIB |
Shell occupancies and binding energies of the electron shells in W |
| Emission of characteristic X-rays in tungsten |
Tungsten electron gun |
| Tetragonal tungsten bronze (TTB) |
Niobium tungsten oxides |
| Ternary tungsten oxides |
Comparison between different electron sources/guns |
| PbxNb1.17W1.0O5.93+x |
EELS measurement of tungsten (W) |
| X–W phase diagrams |
AlxWy |
| Tungsten in ICs |
WSix |
| Tungsten nitride (WNx) |
EDS and WDS measurements of tungsten |
| Tunnels in crystals |
Tetragonal tungsten bronze (TTB)
|
|
| Turbo-molecular pumps (TMPs) |
Twin condenser lens systems in EMs |
| Twinning and twin boundaries |
| Σ3 grain and twin boundaries in FCC materials |
Σ11 grain and twin boundaries in FCC materials |
| Σ43 grain and twin boundaries in FCC materials |
Σ99 grain and twin boundaries in FCC materials |
| Triple twinning |
Example of indexing electron diffraction pattern from twins |
| Two-beam diffraction conditions/first Bethe approximation in TEM measurements |
| Sample thickness determination using CBED |
Burgers vector determination of dislocations |
| Two-beam dynamical electron scattering/diffraction |
Two-beam kinematic electron scattering/diffraction |
| Beam intensities at two-beam diffraction condition |
| Two-dimensional (2-D) |
| Two-dimensional (2D) hexagonal atomic sheet |
Two-dimensional (2-D) lattice |
| Two-fold |
| Difference between axial coma and twofold astigmatism |
Twofold astigmatism |
| Two-fold axial astigmatism: aberration coefficient C1,2/A1 |
Aberrations with two fold symmetry |
| Twofold superstructure |
Twofold axis in crystals |
