Practical Electron Microscopy and Database

An Online Book, Second Edition by Dr. Yougui Liao (2006)

Practical Electron Microscopy and Database - An Online Book

Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix

Purchase/Buy/Sale/Service of TEM Systems and Acceptance Specifications of New Systems

Since the first 200 and 300 kV FEGTEMs (field emission gun TEMs) had been sold by JEOL and Philips, the sales of FEGTEMs were rising steadily. The acceptance specifications of new Transmission Electron Microscopy (TEM) systems typically include a set of performance metrics and operational criteria that must be met before the equipment is considered suitable for analytical or research applications. Key specifications often include image resolution, which ensures that the TEM can accurately resolve features down to sub-nanometer scales, and electron gun stability, which affects the consistency and reliability of the electron beam for extended imaging sessions. Additional acceptance criteria may involve stage accuracy and precision, ensuring reproducible positioning and movement of samples under varying conditions. Image contrast and signal-to-noise ratio are also crucial, as these determine the quality and interpretability of the images produced. Furthermore, the TEM system is often evaluated for its ability to handle different modes of imaging (e.g., bright-field, dark-field, high-resolution TEM, and scanning TEM) to support adaptable analytical applications. Acceptance tests may also include energy resolution for Electron Energy Loss Spectroscopy (EELS) and X-ray analysis capabilities for compositional information, validating that the system meets the intended operational standards for comprehensive material characterization. Table 0006 lists a reference of acceptance specifications of new TEM systems.  

Table 0006. Reference of acceptance specifications of new TEM systems.  

  Mode Voltage Materials Probe size Cold FEG Thermal FEG
Without Cs corrector With Cs corrector Without Cs corrector With Cs corrector
Lattice resolution  TEM 200 kV Au(100)       0.10 - 0.30 nm  
120 kV       0.10 - 0.30 nm  
80 kV       0.10 - 0.30 nm  
Point resolution TEM 200 kV       0.07 - 0.1 nm 0.20 - 0.25 nm 0.07 - 0.1 nm
120 kV         0.20 - 0.28 nm 0.08 - 0.12 nm 
100 kV         0.21 - 0.28 nm  
80 kV         0.20 - 0.30 nm  
Stage drift             0.10 - 1.0 nm/min  
Probe drift             0.10- 0.50 nm/min  
Resolution  STEM-BF 200kV         0.15 - 0.17 nm  
150kV         0.16 - 0.18 nm  
120kV         0.18 - 0.20 nm  
100kV         0.26 - 0.28 nm  
80kV         0.26 - 0.28 nm  
STEM-DF 200kV         0.15 - 0.17 nm  
120kV         0.18 - 0.20 nm  
100kV         0.26 - 0.28 nm  
80kV         0.26 - 0.28 nm  
Probe current STEM 200kV   5.0nm     7.41 - 7.80 nA  
200kV   3.0nm     6.31 - 6.40 nA  
120kV       5.15 - 5.22 nA  
100kV       5.41 - 5.48 nA  
80kV       4.87 - 4.96 nA  
200kV   2.0nm     3.62 - 3.69 nA  
120kV       4.07 - 4.14 nA  
100kV       4.23 - 4.30 nA  
80kV       3.84 - 3.93 nA  
200kV   1.0nm     0.992 - 1.00 nA  
120kV       1.00 - 1.06 nA  
100kV       0.98 - 1.04 nA  
80kV       0.90 - 1.00 nA  
200kV   0.4nm     0.050 - 0.057 nA  
120kV       0.048 - 0.057 nA  
100kV       0.042 - 0.052 nA  
80kV       0.041 - 0.051 nA  
200kV   0.2nm     0.012 - 0.022 nA  
120kV       0.012 - 0.020 nA  
100kV       0.011 - 0.019 nA  
80kV       0.010 - 0.018 nA  
200kV   0.02 nm     0.04 - 0.06 nA