Electron microscopy
  
Dopant-Selective Etching/Staining in IC Analysis
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The TEM images in Figure 1209 show that the light doped drain (LDD) on the drain side of the fault pull down transistor (PD2) is partially blocked by a space particle. Note that the TEM sample was stained in a mixture solution of HNO3, HF and CH3COOH before TEM observation.

Dopant-Selective Etching/Staining in IC Analysis
Dopant-Selective Etching/Staining in IC Analysis

Figure 1209. TEM images of stained junctions: (a) Doping profile of a fault PD2 and a pass PD2, and (b) Zoom-in image of the fault PD2 showing a spacer particle above the LDD doping region. The arrow in red points to the un-etched junction corner, indicating LDD missing, and the green arrow points to a space particle which blocked implantation. Adapted from [1]



 

 

 

 

 

 

 

 

[1] Jie Su, Sanan Liang, Yoyo Wen, May Yang, Linfeng Wu, Chorng Niou, Xianfeng Chen, and Gary Zhao, Electrical Signature Verification of a Lightly Doped Drain Profile Abnormality in a 65 nm Device via Nano-Probing and Junction Stain TEM, ISTFA 2009: Conference Proceedings from the 35th International Symposium for Testing and Failure Analysis, November 14-19, 2009, San Jose, USA.

 
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