Electron microscopy
Electron Beam Absorbed Current (EBAC)/Resistive Contrast Imaging (RCI)
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Electron Beam Absorbed Current (EBAC), also called Resistive Contrast Imaging (RCI), is based on a similar principle as Electron Beam Induced Current (EBIC). In this technique, the electron beam of SEM injects charges which is then absorbed by metal lines under the surface. Therefore, a current is induced and measured by a probe placed on the SEM sample. In this case, the probed signal is overlaid on the secondary electron image so that direct localization of the failure becomes possible. Note that EBAC is especially used to locate failures in metallization networks inside semiconductor devices.

Figure 1263 shows that a strong EBAC signal is observed from an underlying active area when EBAC measurement is performed on a leaky gate.

EBAC Results of the bad sample

Figure 1263. EBAC Results of the bad sample. [1]










[1] Ping Khai Tan, M. K. Dawood, G. R. Low, H. H. Yap, Ruiyang He, Seung Je Moon, Hong Ying Feng, Hao Tan, Y. M. Huang, D. D. Wang, Y. Z. Zhao, Yongkai Zhou, S. James, C. Q. Chen, Jeffery Y.K. Lam, Z. H. Mai, Nanoprobing EBAC technique to reveal the failure root cause of gate oxide reliability issues of an IC process, 2014 IEEE International IntegratedReliability Workshop, DOI:10.1109/iirw.2014.7049496.