Chapter/Index: Introduction | A |
B |
C |
D |
E |
F |
G |
H |
I |
J |
K |
L |
M |
N |
O |
P |
Q |
R |
S |
T |
U |
V |
W |
X |
Y |
Z |
Appendix
CMOS Failure Mechanisms in FinFET Technology
Table 1294. CMOS failure mechanisms in FinFET technology.
FinFETs |
Node |
Test polarity |
Failure mechanism |
[1] |
MOSFET |
65 nm |
Positive |
FinFET drain |
[1] |
Drain-to-source |
Molten silicon |
[1] |
45 nm |
Positive |
FinFET drain |
[1] |
Drain-to-source |
Molten silicon |
[1] |
32 nm |
Positive |
FinFET drain |
[1] |
Drain-to-source |
Molten silicon |
[1] |
Diode-configured FinFET |
65 nm |
Positive |
FinFET fin region |
[1] |
Drain-to-source |
[1] |
45 nm |
Positive |
FinFET fin region |
[1] |
Drain-to-source |
[1] |
32 nm |
Positive |
FinFET fin region |
[1] |
Drain-to-source |
[1] |
FinFET |
|
Positive |
p+/n+ fin region |
[1] |
p-n gated diode |
|
Anode-to-cathode |
Uniform conduction |
[1] |
[1] Steven H. Voldman, ESD: Failure Mechanisms and Models, 2009.
|