Electron microscopy
Electrical Overstress (EOS) Failure Mechanisms
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Table 1297 lists electrical overstress (EOS) in multi-gate technologies and FinFET (Fin Field Effect Transistor) devices. FinFET structures is used to replace standard planar MOSFETs in advanced CMOS technology nodes.

Table 1297. EOS in multi-gate technologies and FinFET devices.
FinFET type Technology (nm) Test polarity Pin pair (stress/reference) Failure mechanism Reference
MOSFET 65 Positive Drain-to-source FinFET drain molten silicon [1]
45 [1]
32 [1]
Diode configured FinFET 65 Positive Drain-to-source FinFET fin region [1]
45 [1]
32 [1]
FinFET P-N gated diode   Positive Anode-to-cathode P+/N+ fin region uniform conduction [1]

EOS (Electrical Overstress) failure mechanisms in CMOS technology can occur in all active and passive elements [1]:
         i) N-channel MOSFET,
         ii) P-channel MOSFET,
         iii) N-doped diffused resistors,
         iv) P-doped diffused resistors,
         v) Silicided polysilicon resistors,
         vi) Non-silicide polysilicon resistors,
         vii) Metal-oxide-metal capacitors,
         viii) Metal-insulator-metal capacitor,
         ix) Decoupling capacitors,
         x) Vertical natural plate (VNP) capacitors.









[1] Steven H. Voldman, Electrical Overstress (EOS): Devices, Circuits and Systems, 2013.