Practical Electron Microscopy and Database

Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix

TEM Lattice Fringe Affected by FIB Damage

Figure 1310 shows HAADF lattice images of Si crystalline specimens prepared with 40 kV and 2 kV Ga+ Polishing. It is clear that the 40 kV milling caused more damage. (a) (b) Figure 1310. HAADF lattice images of Si crystalline specimens: (a) 2 kV and (b) 40 kV Ga+ Polishing.