This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

=================================================================================

Different techniques can be applied to prepare TEM specimens from amorphous materials.

Miller and Gibson [1] reported that SiO₂ (silicon oxide) TEM specimen in thickness of 4 - 6 nm was used to investigate the point defects in the amorphous materials based on FFT and inverse FFT techniques. They also claimed that the point defects in the SiO₂ films are about 0.7 nm in size.

TEM specimens of Zr₅₅Al₁₀Ni₅Cu₃₀ amorphous alloy [2] were prepared by mechanically thinning 3-mm discs to 80 μm thick, and then by the standard twin-jet electrolytic thinning in an HCIO₄–C₂H₅OH solution (volume ratio 1 : 10) at −25 °C, finally by the low-angle (5°) ion milling thinning for about 10 min. The goal of the ion milling step is to remove the residual chemicals attached on the specimen surface during the twin-jet thinning.