This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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Titanium silicides are materils used in different industrial fields due to their excellent properties:
        i) Titanium disilicide (TiSi₂) is a refractory metal silicide commonly applied as interconnects in ultra-large-scale integrated (ULSI) circuits and as gate electrodes in metal–oxide–semiconductor (MOS) transistors [6 - 7] because of its low resistivity, thermal stability and excellent electrical contact properties with silicon [1 - 3].
        ii) Titanium silicides have highly suitable properties as a mask for silicon bulk micro-machining because it exhibits very low etch rates in potassium hydroxide (used for anisotropic etching of silicon) [8].
        iii) Titanium silicide (Ti₅Si₃) is a material suitable for high temperature applications [4, 5]. It has combined properties of a high melting point (2403 K), a low density (4.32 g/cm³), high hardness (11.3 GPa), and a relatively high Young’s modulus (225 GPa) [4].
        iv) Titanium alloys are used in many automotive and aerospace applications because of their attractive properties, such as high specific strength and excellent corrosion resistance.

The chemical reaction for TiSi₂ film growth is given by,

           --------------- [2008]

Table 2008. Metallization selections in ICs.

Application	Selection
Gates, interconnection, and contacts	Polysilicon, refractory metal silicides (e.g. MoSix, TaSix, WSix, and TiSix), nitrides,aluminum, copper, and/or refractory metals.
Diffusion barrier layer	Ti, TiN, Ta, TaN, Ti-W alloy, and/or silicides
Top level	Aluminum, and/or copper
Metallization on silicon	Silicides, tungsten, aluminum, and/or copper

Note that titanium silicidation generates less silicon vacancies in the silicon substrate than by cobalt silicidation. [9]

[1] BhaskaranM, Sriram S, Mitchell D R G and Holland A S 2008 Semicond. Sci. Technol. 23, 035021.
[2] S. L. Zhang and M. Östling, Crit. Rev. Solid State Mater. Sci. 28, 1 (2003).
[3] Zhang S-L and östling M 2003 Metal silicides in CMOS technology: past, present, and future trends Crit. Rev. Solid State Mater. Sci. 28 1–129.
[4] Meschter PJ, Schwartz DS. Silicide-matrix materials for hightemperature applications. J Organomet Chem 1989;52–5.
[5] Murarka SP, Fraser DB. Thin film interaction between titanium and polycrystalline silicon. J Appl Phys 1980;51(1):342–9.
[6] A.A. Bos, N.S. Parekh, A.G.M. Jonkers, Thin Solid Films 197 (1991) 169.
[7]  Murarka S P 1995 Silicide thin films and their applications in microelectronics Intermetallics 3 173–86.
[8] Fruhauf J 2005 Shape and Functional Elements of the Bulk Silicon Microtechnique: A Manual of Wet-Etched Silicon Structures (Berlin: Springer) p 11.
[9] S. B. Herner, K. S. Jones, H.-J. Gossmann, J. M. Poate, and H. S. Luftman, Appl. Phys. Lett. 68, 1687 (1996).