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WSix
- Practical Electron Microscopy and Database -
- An Online Book -
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http://www.globalsino.com/EM/
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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
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Table 2009a. Metallization selections in ICs.
Application |
Selection |
Gates, interconnection, and
contacts |
Polysilicon, refractory metal silicides (e.g. MoSix, TaSix, WSix, and TiSix), nitrides,aluminum, copper, and/or refractory metals. |
Diffusion barrier layer |
Ti, TiN, Ta, TaN, Ti-W alloy, and/or silicides |
Top level |
Aluminum, and/or copper |
Metallization
on silicon |
Silicides, tungsten, aluminum, and/or copper |
The chemical reaction for WSi2 film growth is given by,
 --------------- [2009]
Table 2009b. Properties of WSi2 materials.
Properties |
Tetragonal WSi2 |
Thin film
resistivity
(μΩ − cm) |
30-120 |
Thermal expansion (ppm/°C) |
6-8 |
Melting point
(°C) |
2165 |
Sintering temperature
(°C) |
1000 |
Stable on
Si up to
(°C) |
~1000 |
Reaction
with Al at
(°C) |
500 |
nm of Si
consumed
per nm of
metal |
2.53 |
nm of
resulting
silicide
per nm of
metal |
2.58 |
Si consumption (nm Si/nm Silicide) |
0.98 |
Barrier
height to
n-Si (eV) |
0.67 |
Advantages |
Can be deposited by CVD so that it is easy in manufacturing |
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The book author (Yougui Liao) welcomes your comments, suggestions, and corrections, please click here for submission. If you let book author know once you have cited this book, the brief information of your publication will appear on the “Times Cited” page.
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