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Voids Formed in Si at Contact Interfaces
- Practical Electron Microscopy and Database -
- An Online Book -
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https://www.globalsino.com/EM/
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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
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Ideally, to form contacts in ICs, Al (aluminum) can be deposited directly onto Si with perfect interfaces between Al and Si as shown in Figure 2017 (a). Unfortunately, the Si migrates into the Al, resulting in voids formed in the Si as shown in Figure 2017 (b).
Figure 2017. (a) Al deposited directly onto Si; (b) Voids formed in Si.
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The book author (Yougui Liao) welcomes your comments, suggestions, and corrections, please click here for submission. You can click How to Cite This Book to cite this book. If you let Yougui Liao know once you have cited this book, the brief information of your publication will appear on the “Times Cited” page.
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