Ohmic Contacts in ICs
- Practical Electron Microscopy and Database -
- An Online Book -


This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.


A good ohmic contact in ICs should be electrically and mechanically stable with a negligible contact resistance (RC). The RC is related to the Schottky barrier height of the metal and the dopant concentration in the contacting semiconductor materials. Therefore, the Fermi levels in the two materials must be aligned at their interface. On the other hand, RC decreases with increasing dopant concentration and decreasing barrier height.




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