Chapter/Index: Introduction | A |
B |
C |
D |
E |
F |
G |
H |
I |
J |
K |
L |
M |
N |
O |
P |
Q |
R |
S |
T |
U |
V |
W |
X |
Y |
Z |
Appendix
Thermal Properties of Silicides
| Table 2036_c. Thermal properties of silicides.
Silicides |
Thermal expansion (ppm/°C) |
Coefficient of thermal expansion (CTE)
(x10-6/°C) |
Temperature of zero lattice mismatch with Si |
(Lowest) Eutectic temperature (°C) |
Melting point (°C) |
Stable on
Si up to
(°C) |
Stable on
Al up to
(°C) |
Interaction with SiO2 |
Self-diffusion coefficient [cm2/s] |
Diffusion coefficient in Si
[cm2/s] |
Dominant diffusing species |
Enthalpy of
formation
(kJ/mol) |
| Ag |
|
|
|
Medium: 800-1100 |
|
|
|
|
0.67 |
2.0x10-3 |
|
|
| Al |
|
|
|
Low: <800 |
Low |
|
|
yes |
0.107 |
1.385-5.6 |
|
|
| As |
|
|
|
|
|
|
|
|
|
0.066 |
|
|
| Au |
|
|
|
Low: <800 |
|
|
|
|
|
|
|
|
| B |
|
|
|
|
|
|
|
|
|
0.037 |
|
|
| Bi |
|
|
|
|
|
|
|
|
|
1.08 |
|
|
| Co |
|
12 |
|
|
|
|
|
|
0.83 |
9.2x10-4 |
|
|
Co2Si |
|
|
|
|
|
|
|
|
|
|
Co |
|
CoSi |
|
|
|
|
1460 |
|
|
|
|
|
|
|
|
|
10.14/12.0 |
~1100 °C [1] |
1195 |
|
~950 |
|
|
1x10-5 at 1100 °C |
|
|
|
CoSi/Co2Si |
|
|
|
|
|
|
|
|
|
|
|
|
| Cr |
|
|
|
|
|
<450 |
|
|
0.2 |
0.01 |
|
|
Cr3Si |
10.5 |
|
|
|
1773 |
|
|
|
|
|
|
|
CrSi2 (C11b) |
|
|
|
1300 |
1475 |
|
|
|
|
|
|
|
CrSi2 (C40) |
|
|
|
1300 |
1477 |
|
|
|
|
|
|
|
| Cu |
|
|
|
Medium: 800-1100 |
|
|
|
|
0.78 |
4.0x10-2 |
|
|
Cu3Si |
|
|
|
|
|
|
|
|
1x10-4 at 1100 °C |
|
|
|
| Fe |
|
|
|
|
|
|
|
|
5.4 |
6.2x10-3 |
|
|
| FeSi |
|
|
|
|
|
|
|
|
|
|
Si |
|
α-FeSi2 |
|
|
|
1208 |
|
>915 |
|
|
|
|
|
|
β-FeSi2 |
|
|
|
1208 |
|
<915 |
|
|
|
|
|
|
| Ga |
|
|
|
|
|
|
|
|
|
0.374 |
|
|
| In |
|
|
|
|
|
|
|
|
|
0.785 |
|
|
| Hf |
|
5.9 |
|
|
|
|
|
yes |
1.2 X 10-3 |
|
|
|
HfSi |
|
|
|
|
2200 |
|
|
|
|
|
Si |
|
| HfSi2 |
|
|
|
1300 |
|
|
|
|
|
|
|
|
IrSi |
|
|
|
|
|
|
|
|
|
|
|
|
| Mg |
|
|
|
Low: <800 |
Low |
|
|
yes |
|
|
|
|
MnSi |
|
|
|
|
1275 |
|
|
|
|
|
|
|
MnSi2-x |
|
|
|
|
|
|
|
|
|
|
|
|
MnSi2 |
|
|
|
|
|
|
|
|
3x10-6 at 1100 °C |
|
|
|
Mn11Si19 |
|
|
|
|
1145 |
|
|
|
|
|
|
|
| Mo |
|
5 |
|
|
|
<450 |
|
|
0.5 |
|
|
|
Mo5Si3 |
|
|
|
|
2160 |
|
|
|
|
|
|
|
MoSi2 (C11b) |
8.25 |
|
|
1410 |
1980 - 2030 |
|
|
|
|
|
Si |
|
MoSi2 (C40) |
|
8.25 |
|
1410 |
|
|
|
|
|
|
Si |
|
|
|
|
|
1410 |
|
~1000 |
500 |
|
|
|
Si |
|
| N |
|
|
|
|
|
|
|
|
|
0.05 |
|
|
| Nb |
|
|
|
|
|
|
|
yes |
|
|
|
|
Nb/Nb5Si3 |
|
|
|
|
1883 |
|
|
|
|
|
|
|
| Nb |
|
7 |
|
|
|
|
|
|
|
|
|
|
Nb5Si3 (D8b) |
|
|
|
|
2484 |
|
|
|
|
|
|
|
| Nb |
|
|
|
|
|
|
|
|
1.1 |
|
|
|
NbSi2 |
|
|
|
1295 |
1930 |
|
|
|
|
|
|
|
NbSi2 (C11b) |
|
8.4/11.7 |
|
1295 |
|
|
|
|
|
|
|
|
NbSi3 |
|
|
|
|
2480 |
|
|
|
|
|
|
|
| Ni |
|
13.4 |
|
Medium: 800-1100 |
1455 |
|
|
|
1.9 |
0.002 |
|
|
NiSi |
|
12 |
|
|
992 |
700 |
|
|
|
|
|
85–90 |
NiSi2 |
|
12.06/16.0 |
~380 °C [1] |
966 |
981-993 |
|
|
|
4x10-5 at 1100 °C |
|
|
87–94 |
Ni2Si |
|
16.5 |
|
|
1255-1306 |
|
|
|
|
|
Ni |
132–143 |
| Ni3Si |
|
9.0 |
|
|
1035-1170 |
|
|
|
|
|
|
149 |
| Ni3Si2 |
|
|
|
|
830-845 |
|
|
|
|
|
|
224–232 |
| Ni31Si12 |
|
|
|
|
1242 |
|
|
|
|
|
|
1850 |
| P |
|
|
|
|
|
|
|
|
|
3.85 |
|
|
| Pd |
|
13 |
|
Low: <800 |
|
<450 |
|
|
0.205 |
|
|
|
Pd2Si |
|
|
|
Low: 720 |
1330 |
700 |
300 |
|
|
|
Pd, Si |
|
| Pt |
|
8 |
|
Medium: 800-1100 |
|
<450 |
|
|
0.33 |
1.5-1.7x102 |
|
|
PtSi |
|
|
|
830 |
1229 |
~750 |
300 |
|
|
|
|
|
Pt2Si |
|
|
|
|
|
|
|
|
|
|
Pt |
|
ReSi2 (C11b) |
6.6 |
|
|
1125 |
|
|
|
|
|
|
|
|
| Rh |
|
|
|
|
|
<450 |
|
|
|
|
|
|
RhSi |
|
|
|
|
|
|
|
|
|
|
|
|
| Ru2Si3 |
|
|
|
1370 |
|
|
|
|
|
|
|
|
| Sb |
|
|
|
|
|
|
|
|
|
0.214 |
|
|
| Si |
|
2.60 |
|
|
1414 |
|
|
|
102.19±1.4 |
|
|
|
| Ta |
|
6.5 |
|
|
|
|
|
yes |
1.24 |
|
|
|
Ta5Si3 (C40) |
α1 = 5.5
α3 = 8 |
|
|
|
|
|
|
|
|
|
|
|
Ta5Si3 |
|
|
|
|
2500 |
|
|
|
|
|
|
|
|
|
8.8-10.7 |
|
1385 |
|
~1000 |
500 |
|
|
|
Si |
|
| Ti |
|
8.5 |
|
|
|
|
|
yes |
6.4 X 10-8, 3.58 X 10-4, and 1.09 for different phases |
2.0 X 10-5 |
|
|
Ti5Si3 (D8m) |
α1 = 3.05
α3 = 10.7 |
|
|
|
2130 |
|
|
|
|
|
|
|
Ti5Si3 |
|
|
|
|
2130 |
|
|
|
|
|
|
|
Ti/Ti5Si3 |
|
|
|
|
1332 |
|
|
|
|
|
|
|
TiSi2 (C49) |
|
12.5 |
|
1330 |
1540 |
|
|
|
|
|
Si |
|
|
|
|
|
1330 |
|
~950 |
450 |
|
|
|
Si |
|
| Tl |
|
|
|
|
|
|
|
|
|
1.37 |
|
|
| V |
|
8 |
|
|
|
<450 |
|
yes |
0.36 |
|
|
|
V3Si |
12.5 |
|
|
|
1973 |
|
|
|
|
|
V |
|
VSi2 (C11b) |
|
11.2/14.65 |
|
1385 |
|
|
|
|
|
|
Si |
|
VSi2(C40) |
|
|
|
1385 |
|
|
|
|
|
|
Si |
|
| W |
|
4.5 |
|
|
|
|
|
|
1.88 |
|
|
|
W5Si3 |
|
|
|
|
2370 |
|
|
|
|
|
|
|
WSi2
(C40) |
|
6.25/7.90 |
|
1440 |
|
|
|
|
|
|
Si |
|
|
|
|
|
1440 |
|
~1000 |
500 |
|
|
|
Si |
|
| Zr |
|
5.7 |
|
|
|
|
|
yes |
5.6 X 10-4, and 0.04 for different phases |
|
|
|
ZrSi2 |
|
8.3 |
|
1355 |
1520 |
|
|
|
|
|
|
|
[1] R. T. Tung, Epitaxial CoSi2 and NiSi2 thin films, Materials Chemistry and Physics, 32 (1992) 107-133.
|
