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An example is that crystalline silicon carbide (SiC) has structures of tetrahedrally coordinated lattice. The atomic layers can stack in cubic (C), hexagonal (H),or rhombohedral (R) configurations. These structures are labeled by the symmetry (C, H, or R) following the number of the layers in one period of the stacking sequence. Therefore, 3C is equivalent to the zincblende structure, while 2H is the wurtzite structure. The most common commercially available form is 6H-SiC.
The zincblende structure is in a symmetry group with three twofold axes, eight threefold axes, four fourfold axes, and six symmetry planes, but it does not have an inversion symmetry.
Table 2081. Properties of some zincblende structures.
Crystal |
Lattice constant (a, nm) |
AlAs |
0.566 |
AgI |
0.647 |
AlP |
0.545 |
AlSb |
0.613 |
BeS |
0.485 |
BeSe |
0.507 |
BeTe |
0.554 |
CdS |
0.582 |
CdTe |
0.648 |
CuBr |
0.569 |
CuCl |
0.541 |
CuI |
0.604 |
GaAs |
0.565 |
GaSb |
0.612 |
GaP |
0.545 |
HgS |
0.585 |
HgSe |
0.608 |
HgTe |
0.643 |
InAs |
0.604 |
InP |
0.587 |
InSb |
0.646 |
SiC |
0.435 |
ZnS |
0.541 |
ZnSe |
0.565 |
ZnTe
|
0.609 |
|