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Figure 2083 shows bandgap and chemical bond length for semiconductors used in visible LEDs (light emitting devices).
Figure 2083. Bandgap and chemical bond length for semiconductors used in visible LEDs (light emitting devices). Adapted from [1]
Crystalline Si has the space group of Fd-3m (see in Table 2019) and the space group for GaAs and InP is F-43m. Both these space groups are simple face-centred cubic (fcc) lattices.
Table 2083a. Properties of InP crystals.
Energy Gap Eg at 0 K (eV) |
1.344 |
|
Intrinsic resistivity ρi (Ωcm) |
8.6 x 107 |
Intrinsic carrier concentration ni (cm-3) |
1.3 x 107 |
|
Electron mobility µe (cm2V-1s-1) |
≤5400 |
Hole mobility µh (cm2V-1s-1) |
≤200 |
|
|
|
Table 2083b. Some surface energies (J/m2) of low-index surfaces of InP crystals. The types of reconstructions are indicated. (1x1) relaxed denotes an unreconstructed cleavage surface.
Solid
|
(100)
|
(110)
|
(111) |
InP |
0.99 β2(2 × 4) |
0.88 (1 × 1) relaxed |
0.99 (2 x 2) In vacancy |
[1] Ponce, F. A. and Bour, D.P., Nature, 386, (1997) 351.
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