Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix
| The materials in LEDs (light emitting devices) need superior electronic properties and high light emission efficiencies by eliminating the crystalline perfection such as stacking faults and dislocations. Defect degradation in LEDs is dominated by the motion of dislocations in the active region with the creation of the so-called dark-line defects. ZnSSe-based/GaAs heterostructures have been becoming very important materials for blue-green light emitting diodes (LEDs) and lasers. However, the applications of these heterostructures are still limited by two main types of defects including dark line defects (DLDs) and dark patches. Both dark patches and DLDs form from pre-existing defects.
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