EELS measurement of tungsten (W)

EELS Measurement of Tungsten (W)
- Practical Electron Microscopy and Database -
- An Online Book -

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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.

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Figure 2217 (a) shows a typical bright field TEM image of an Al/Ti/W/TiN via after thermal stress at 450 °C for 4 hours. An Al₃Ti layer is formed between Al and W via. Figure 2217 (b) shows an EELS profile acquired over 20 s in the needle inclusion. The chemical formula of the needles is between Al₁₀W and Al₁₂W.

A typical bright field TEM image of an Al/Ti /W/TiN via after thermal stress at 450 °C for 4 hours

Figure 2217. (a) A typical bright field TEM image of an Al/Ti /W/TiN via after thermal
stress at 450 °C for 4 hours, and (b) The EELS analysis of the needle inclusion. Adapted from [1].

[1] R. Pantel, H. Wehbe-Alause, S. Jullian, L.F.Tz. Kwakman, A nalytical transmission electron microscopy observation of
aluminium–tungsten interaction in thermally stressed Al/Ti /W/TiN interconnections, Microelectronic Engineering 64 (2002) 91–98.

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