IC Failure Induced during Metal Etching
- Practical Electron Microscopy and Database -
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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.


Table 2431. Metal-etch-related bond-pad contamination in IC devices.

Contamination sources

Introduced through top metal etch or pad opening process, wafer packaging foam material, or shipping


Induce non-sticking bond pad


Fluorine can
react with Al to form F crystal: (NH4)3(AlF6) compound [1]; High fluorine contamination can induce thick native oxide

Introduced through top metal etch or pad etch process





[1] Y. N. Hua, S. Redkar, C. K. Lau, “A Study on Non- Stick Aluminium Bondpads due to Fluorine Contamination using SEM, EDX, TEM, IC, Auger, XPS and TOF-SIMS Techniques,” Proceedings from the 28th International Symposium for Testing and Failure Analysis, Phoenix, Arizona, November, 2002, pp. 495-504.






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