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IC Failure Induced during Metal Etching
- Practical Electron Microscopy and Database -
- An Online Book -
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https://www.globalsino.com/EM/
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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
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Table 2431. Metal-etch-related bond-pad contamination in IC devices.
Contaminant |
Contamination sources |
Effects |
Fluorine |
Introduced through top metal etch or pad opening process, wafer packaging foam material, or shipping |
Induce non-sticking bond pad
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Fluorine can
react with Al to form F crystal: (NH4)3(AlF6) compound [1]; High fluorine contamination can induce thick native
oxide |
Chlorine |
Introduced through top metal etch or pad etch process |
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[1] Y. N. Hua, S. Redkar, C. K. Lau, “A Study on Non-
Stick Aluminium Bondpads due to Fluorine
Contamination using SEM, EDX, TEM, IC, Auger, XPS
and TOF-SIMS Techniques,” Proceedings from the 28th
International Symposium for Testing and Failure
Analysis, Phoenix, Arizona, November, 2002, pp. 495-504.
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The book author (Yougui Liao) welcomes your comments, suggestions, and corrections, please click here for submission. If you let book author know once you have cited this book, the brief information of your publication will appear on the “Times Cited” page.
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