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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
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Table 2432. Silicon dust contamination in IC devices.
Contaminated area |
Contaminant |
Contamination sources |
Effects |
Bond-pad |
Silicon dust |
Introduced during die sawing, by passivation residue due to under etch [e.g. Figure 2432] |
Induce non-sticking bond pad |
Figure 2432 shows an example of C, O, and Si contaminated bond pads. Area S6 had an abnormal film on the native Al oxide, while area S5 presented nonhomogeneous, loose and empty SixAlyCzOm materials in the hemispherical defect. These pad defects existed only at wafer edge because backside grinding was the root cause of the contamination.
Figure 2432. Contaminated bond pads. Adapted from [1]
[1] Paul Yu, Jamie Su, Qiang Gao, Ming Li, Chorng Niou, Study of Aluminum Pad Contamination Sources during Wafer Fabrication, Shipping, Storage and Assembly, International Symposium on High Density packaging and Microsystem Integration, 2007. HDP '07.
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