Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix
| The most common etchant species of halide gases are Cl2 , IBr, and ICl for etching III nitrides and other compound semiconductor materials in plasma etching processes. On the other hand, I2 and XeF2 had also been used to enhance the etch rate of those materials in FIB [1].
[1] I. Chyr and A. J. Steckl, GaN focused ion beam micromachining with gas-assisted etching, J. Vac. Sci. Technol. B 19(6), (2001) 2547.
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