Chapter/Index: Introduction | A |
B |
C |
D |
E |
F |
G |
H |
I |
J |
K |
L |
M |
N |
O |
P |
Q |
R |
S |
T |
U |
V |
W |
X |
Y |
Z |
Appendix
Examples of FIB Specifications
| Table 2476a. Examples of FIB specifications.
Ion source |
Ga+ liquid metal ion source (LMIS) |
Spatial resolution |
4~7 nm @ 30 kV |
Pixel resolution |
512 x 442, 1024 x 884, 2048 x 1768, 4078 x 1254 |
Image processing |
Pixel averaging, frame/line averaging and integration |
Accelerating voltage |
1 to 30 kV |
Magnifications |
30 X (for wide view) |
100 X to 500k X |
Beam current |
<0.1 pA - 50 nA |
Current density |
10 Acm-2 |
Working distance |
5~7 mm |
Sample navigation |
5-axes motorized x-y-z-rotate-tilt stage |
x and y-axis |
≤100 mm |
z-range |
20-43 mm |
Stage repeatability in x,y |
0.5 µm |
Tilt range |
-10 to 60 degrees |
Rotation |
360 continuous |
Flip stage |
Stores six TEM half-grids, tilts through 150 degrees to allow samples to be oriented for milling and for STEM imaging. |
Minimum Dwell Time |
50 ns/pixel |
Electronic scan rotation |
n x 360 degrees |
Beam blanking speed |
< 100 ns |
Apertures |
Motorised |
Detectors |
Chamber: Everhart-Thornley type SE detector |
Secondary ions detector |
In-lens: High efficiency annular type SE detector
|
Chamber: IR-CCD cameras |
Chamber: BSE detector |
Chamber: BF/DF STEM detector |
Image processing |
Pixel averaging, frame averaging,
continuous averaging |
Gas injection |
Up to 2 different solid state precursors and 4 different gaseous or liquid precursors: Deposition of Pt, W, C, and/or silicon oxide;
Etching with F- and H2O based gas precursors |
Application |
Milling, deposition, and maskless lithography: To special problems, but is not suited for mass production |
System control |
User interface based on Windows operating system, controlled by mouse, key board, joystick and control panel |
Space requirement |
Footprint: 2.3 m x 2.7 m;
Working area: 2.7 m x 3.8 m
|
Table 2476b. Examples of SEM specifications in FIB.
Electron source |
Schottky Field Emission Gun (SFEG); Thermal field emission type |
Acceleration voltage |
0.1 - 30 kV |
Probe current |
4 pA - 50 nA |
Magnification |
20 x - 900k x |
Image processing |
Pixel averaging, frame averaging,
continuous averaging |
Resolutions /
coincidence |
5.5 nm @ 0.5 kV |
2.5 ~ 3.0 nm @ 1 kV |
2.0 nm @ 5 kV |
1.1 nm @ 20 kV |
1.1 ~ 3.0 nm @ 30 kV |
Detectors |
Secondary Electron Detector (SED) |
Back Scatter
(BS) detectors |
Energy dispersive X-ray spectroscopy
(EDS) detector |
|
