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Examples of FIB Specifications
- Practical Electron Microscopy and Database -
- An Online Book -
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https://www.globalsino.com/EM/
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This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
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Table 2476a. Examples of FIB specifications.
Ion source |
Ga+ liquid metal ion source (LMIS) |
Spatial resolution |
4~7 nm @ 30 kV |
Pixel resolution |
512 x 442, 1024 x 884, 2048 x 1768, 4078 x 1254
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Image processing |
Pixel averaging, frame/line averaging and integration |
Accelerating voltage |
1 to 30 kV |
Magnifications |
30 X (for wide view) |
100 X to 500k X |
Beam current |
<0.1 pA - 50 nA |
Current density |
10 Acm-2 |
Working distance |
5~7 mm |
Sample navigation |
5-axes motorized x-y-z-rotate-tilt stage |
x and y-axis |
≤100 mm |
z-range |
20-43 mm |
Stage repeatability in x,y |
0.5 µm |
Tilt range |
-10 to 60 degrees |
Rotation |
360 continuous |
Flip stage |
Stores six TEM half-grids, tilts through 150 degrees to allow samples to be oriented for milling and for STEM imaging. |
Minimum Dwell Time |
50 ns/pixel
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Electronic scan rotation |
n x 360 degrees
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Beam blanking speed |
< 100 ns |
Apertures |
Motorised |
Detectors |
Chamber: Everhart-Thornley type SE detector |
Secondary ions detector |
In-lens: High efficiency annular type SE detector
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Chamber: IR-CCD cameras |
Chamber: BSE detector |
Chamber: BF/DF STEM detector |
Image processing |
Pixel averaging, frame averaging,
continuous averaging |
Gas injection |
Up to 2 different solid state precursors and 4 different gaseous or liquid precursors: Deposition of Pt, W, C, and/or silicon oxide;
Etching with F- and H2O based gas precursors |
Application |
Milling, deposition, and maskless lithography: To special problems, but is not suited for mass production |
System control |
User interface based on Windows operating system, controlled by mouse, key board, joystick and control panel |
Space requirement |
Footprint: 2.3 m x 2.7 m;
Working area: 2.7 m x 3.8 m
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Table 2476b. Examples of SEM specifications in FIB.
Electron source |
Schottky Field Emission Gun (SFEG); Thermal field emission type |
Acceleration voltage |
0.1 - 30 kV |
Probe current |
4 pA - 50 nA |
Magnification |
20 x - 900k x |
Image processing |
Pixel averaging, frame averaging,
continuous averaging |
Resolutions /
coincidence |
5.5 nm @ 0.5 kV |
2.5 ~ 3.0 nm @ 1 kV |
2.0 nm @ 5 kV |
1.1 nm @ 20 kV |
1.1 ~ 3.0 nm @ 30 kV |
Detectors |
Secondary Electron Detector (SED) |
Back Scatter
(BS) detectors |
Energy dispersive X-ray spectroscopy
(EDS) detector |
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The book author (Yougui Liao) welcomes your comments, suggestions, and corrections, please click here for submission. If you let book author know once you have cited this book, the brief information of your publication will appear on the “Times Cited” page.
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