Practical Electron Microscopy and Database

An Online Book, Second Edition by Dr. Yougui Liao (2006)

Practical Electron Microscopy and Database - An Online Book

Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix

Built-in Potential in p-n Junction

The built-in potential Vbi in the p-n junction in semiconductors can be measured by off-axis electron holography, given by,

         p-n Junction using Off-axis Electron Holography ------------------------------ [2552]
where,
          CE -- A constant dependent on the energy of the electron wave (e.g. 7.29 x 10−3 rad V−1 nm−1 for 200 kV electrons),
          Δϕ -- The incident-electron phase change induced by the TEM specimen,
          t -- The local thickness of the specimen.

For detailed discussion, see page4305.