Built-in Potential in p-n Junction
- Practical Electron Microscopy and Database -
- An Online Book -


This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.


The built-in potential Vbi in the p-n junction in semiconductors can be measured by off-axis electron holography, given by,

         p-n Junction using Off-axis Electron Holography ------------------------------ [2552]
          CE -- A constant dependent on the energy of the electron wave (e.g. 7.29 x 10−3 rad V−1 nm−1 for 200 kV electrons),
          Δϕ -- The incident-electron phase change induced by the TEM specimen,
          t -- The local thickness of the specimen.

For detailed discussion, see page4305.




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