Techniques for Dopant Profiling in Semiconductors

Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix

Techniques for Dopant Profiling in Semiconductors

Various techniques can be used to analyze the dopants in semiconductors:
         i) Scanning electron microscopy (SEM) [1, 2],
         ii) Scanning spreading resistance microscopy (SSRM) [3],
         iii) Scanning capacitance microscopy (SCM) [4],
         iv) Off-axis electron holography [5],
         v) Secondary ion mass spectrometry (SIMS).

Except SIMS, the other techniques are applicable for the nanoscale dimensions of state-of-the-art semiconductor devices. Furthermore, one key to the success of dopant analysis in nanometer-scale is the specimen preparation to expose the region of interest, for instance, using focused ion beam (FIB) milling.

[1] Arrays of periodic submicron conductive links in Si covered by SiO₂ formed by polarized laser irradiation, Yougui Liao and Michel Meunier (2006) Semicond. Sci. Technol. 21, 86.
[2] P. Kazemian, A. C. Twitchett, C. J. Humphreys, and C. Rodenburg, Appl. Phys. Lett. 88, 212110 (2006).
[3] P. Eyben, D. Alvarez, M. Jurczak, R. Rooyackers, A. De Keersgieter, E. Augendre, and W. Vandervorst, J. Vac. Sci. Technol. B 22, 364 (2004).
[4] C. C. Williams, Annu. Rev. Mater. Sci. 29, 471 (1999).
[5] M. R. McCartney and D. J. Smith, Annu. Rev. Mater. Res. 37, 729 (2007).

Practical Electron Microscopy and Database

An Online Book, Second Edition by Dr. Yougui Liao (2006)

Techniques for Dopant Profiling in Semiconductors