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Some theoretical models have been developed to interpret EELS behaviors, for instance:
i) Using a Bloch wave formulation to interpret EELS from crystalline specimens [1 - 3],
ii) Using mixed dynamic form factor to interpret EELS behavior [4],
iii) Using two-beam channeling [5],
iv) Discussing the effects of orientation on ELNES using LAPW (linearized planewave), [6]
v) Interpreting the effects of orientation and channeling using a Bloch wave formulation, [7, 8]
vi) Interpreting channeling and interference effects using a Bloch wave approach. [9]
[1] V.W. Maslen, C.J. Rossouw, Philos. Mag. A 49 (1984)
735, 743.
[2] D.K. Saldin, Philos. Mag. B 56 (1987) 515.
[3] D.K. Saldin, P. Rez, Philos. Mag. B 55 (1987) 481.
[4] H. Kohl, H. Rose, in: P.W. Hawkes (Ed.), Advances in
Electronics and Electron Physics, vol. 65, Academic Press,
New York. 1985, p. 1973.
[5] P.E. Batson, Phys. Rev. Lett. 70 (1993) 1822.
[6] C. Hébert-Souche, P.-H. Louf, P. Blaha, M. Nelhielbel,
J. Luitz, P. Schattschneider, K. Schwartz, B. Jouffrey,
Ultramicroscopy 83 (2000) 9.
[7] T.W. Josefsson, L.J. Allen, Phys. Rev. B 53 (1996) 2277.
[8] M.P. Oxley, L.J. Allen, Phys. Rev. B 57 (1998) 3273.
[9] P. Schattschneider, C. Hébert, B. Jouffrey, Ultramicroscopy
86 (2001) 343.
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