This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

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Voids in ICs can frequently be localized by IR-OBIRCH (infra red-optical beam induced resistance change) and can physically be analyzed using FIB technique. It was also proposed [1] that the Seebeck effect works well for detecting voids when no electrical bias is applied to a device.

[1] Koyama, T., et al., IRPS, IEEE, USA, p.228 (1995).