Interfacial Diffusion Mechanism of
Electromigration in Interconnects in ICs
- Practical Electron Microscopy and Database -
- An Online Book -

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The grains in Cu interconnects in ICs normally span the entire linewidth at linewidths of less than 2 µm (called bamboolike microstructure). In this case, Cu in electromigration (EM) processes migrates at the interface between Cu and the dielectric diffusion barrier because these grains act as blocking grains. However, no blocking grain exists in the linewidths of 4–6 µm (the Cu microstructure is in polycrystalline phase). In this case, Grain boundary and/or interface diffusion can occur in the EM process. SIM images in Figure 2903 show the microstructures of the Cu interconnects with Ta liner: (a) Cu linewidth of 0.8 µm (bamboolike microstructure), and (b) Cu linewidth of 6 µm (polycrystalline).

SIM images of the Cu interconnects with Ta liner

Figure 2903. SIM images of the Cu interconnects with Ta liner: (a) Cu linewidth of 0.8 µm (bamboolike microstructure), and (b) Cu linewidth of 6 µm (polycrystalline). Adapted from [1]

 

 

 

 

 

[1] T. Usui, H. Nasu, T. Watanabe, H. Shibata, T. Oki, and M. Hatano, Electromigration diffusion mechanism of electroplated copper and cold/hot two-step sputter-deposited aluminum-0.5-wt % copper damascene interconnects, J. Appl. Phys. 98, 063509 (2005).

 

 

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