Dependence of EELS/EFTEM on Accelerating
Voltages of Incident Electrons
- Practical Electron Microscopy and Database -
- An Online Book -

https://www.globalsino.com/EM/  



 
This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
 

=================================================================================

Similar to EDS spectra, the peak-to-background ratio (P/B ratio) in EELS spectra increase with the accelerating voltages from 100 kV to 400 kV, resulting in an increase in the detection sensitivity of any trace elements.

The spatial resolution for both the EDS and EELS/EFTEM analyses is improved with the accelerating voltages, since the incident electron beam spread decreases with an increase in the accelerating voltage.

Note that low accelerating voltage electron beams can enhance the sensitivities for EELS and EDS because the reduced the acceleration voltage increases the ionization cross-section, which is determined by the overvoltage ratio.

With increasing accelerating voltage:
        -- The scattering cross-section for ionization decreases,
        -- Signal decreases, but background decreases even quicker,
        -- To maximize the signal-to-background ratio, increase the accelerating voltage.

 

=================================================================================

The book author (Dr. Liao) welcomes your comments, suggestions, and corrections, please click here for submission. You can click How to Cite This Book to cite this book. If you let Dr. Liao know once you have cited this book, the brief information of your publication will appear on the “Times Cited” page.



 
 
 
Copyright (C) 2006 GlobalSino, All Rights Reserved