This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.

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Figure 3833a shows the generation of secondary electrons (SEs) and kinetic energies of the emitted SEs. E_KE1 and E_KE2 represent the kinetic energies of the two generated SEs. The kinetic energy of the generated SEs is normally in the range of 0 to 50 eV. ΔE₁ and ΔE₂ represent the energy losses of the incident electrons after the incident electrons interact with the electrons in the K and L₃ subshells, respectively. E₁ and E₂ are the binding energies of the two electrons. E₀ is the energy of the incident electrons in the EMs.

Figure 3833a. The generation of secondary electrons (SEs) and kinetic energies of the emitted SEs.

Figure 3833b. shows the schematic illustration of SE (secondary electron) energy spectroscopy. The SE energy spectroscopy, which is the relative SE number as a function of the SE energy (N(E)), is characterized by the most probable energy (eV_mp) and the full width at half maximum (FWHM). The spectroscopy generally varies in a range with the composition of the materials and surface condition.

Figure 3833b. Schematic illustration of SE (secondary electron) energy spectroscopy.

Table 3833 presents the most probable energy (eV_mp) and the full width at half maximum (FWHM) of SE energy spectroscopy various materials.

Table 3833. The eV_mp and FWHM of SE energy spectroscopy various materials.

	eVmp	FWHM	Reference
Typical	2 -5
Cu	17 ± 2
Si	~ 10 (depth = 0.1 nm)		[2]
Si	2 (depth = 2 nm)		[2]
SiO2	2	7	[1]
Ti	17 ± 2

[1] Schreiber, E. and Fitting, H. J. (2002) Monte Carlo simulation of secondary electron emission from the insulator SiO2. J. Electron Spectrosc.
Relat. Phenom., 124, 25 - 37.
[2] C. Rodenburg, M. A. E. Jepson, E. G. T. Bosch, M. Dapor, Energy selective scanning electron microscopy to reduce the effect of contamination layers on scanning electron microscope dopant mapping, Ultramicroscopy 110 (2010) 1185–1191.