This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.
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Table 4384. Sputtering (etching) threshold energies by incident energetic electron and ion beams.
Element |
Sputtering threshold energies by incident electrons [keV] |
|
Al |
65 [1]; 180 [2] |
|
Au |
407 [1]; 1320 [2] |
|
C |
68 [1] |
|
C: Graphite |
140 [2] |
|
C: Diamond |
330 [2] |
|
Co |
171 [1] |
|
Cr |
142 [1] |
|
Cu |
147 [1]; 420 [2] |
|
Fe |
158 [1] |
|
Ag |
202 [1] |
|
Ge |
181 [1] |
|
Li |
8.7 [1] | |
Mo |
366 [1] |
|
Mn |
109 [1] |
|
Nb |
385 [1] |
|
Ni |
172 [1] |
|
Pt |
560 [1] |
|
Si |
91 [1] |
|
Sr |
104 [1] |
|
Ta |
673 [1] |
|
Ti |
154 [1] |
|
V |
175 [1] |
|
W |
728 [1] |
|
Zn |
63 [1] |
|
Zr |
328 [1] |
|
|
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Figure 4384 shows the threshold energy for damage displacement for onset of electron sputtering in solid elements. Any incident electron beams with higher voltages than the threshold voltage can cause atomic sputtering.
Figure 4384. Threshold energy for damage displacement for onset of electron sputtering in solid elements [3].
[1] R. F. Egerton, R. McLeod, F.Wang, M.Mala, Basic questions related to electron-induced sputtering in the TEM, Ultramicroscopy 110 (2010) 991–997.
[2] Hobbs, L. W., 1987. Radiation effects in analysis by TEM. In: Hren, J. J.,
Goldstein, J. I., Joy, D. C. (Eds.), Introduction to Analytical Electron
Microscopy, Plenum Press, New York, pp. 399–445.
[3] R.F. Egerton, P. Li, and M. Malac, Radiation damage in the TEM and SEM, Micron 35 (2004) 399–409.
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