Practical Electron Microscopy and Database

An Online Book, Second Edition by Dr. Yougui Liao (2006)

Practical Electron Microscopy and Database - An Online Book

Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix

JEM-ARM 200F TEM

JEM-ARM 200F

JEM-ARM 200F, a modern TEM, has been integrated with aberration correction into a super-shielded electron column that safeguards the ultrahigh-powered optics from environmental interferences. The completely new electron column design in this type of microscopes provides atomic spatial energy resolution as well as high probe currents, enabling both atom-by-atom imaging resolution and unmatched spatial resolution for atom-to-atom chemical mapping of materials, including EDS and EELS. Figure 4460 shows the resolved Si (silicon) structures by UT-SA JEOL JEM-ARM 200F. Figure 4460 (b) demonstrates that HAADF image gave at least 78 picometer spatial resolution. Clearly, these high resolution microscopes can be used for sub-atomic research.

High resolution image from JEM-ARM 200F

Figure 4460. (a-b) Bright field (BF) and HAADF STEM images of Si [110] taken at 200 kV on JEOL JEM-ARM 200F. The HAADF image shows spatial resolution down to 0.078 nm, while the BF image resolves spatial information < 0.1 nm. (c-d) Bright field (BF) and HAADF STEM images of Si [110] taken at 120 kV on JEOL JEM-ARM 200F. Both the HAADF and BF images show spatial resolution down to < 0.1 nm.