Dependence of Dopant Contrast in Si on
Accelerating Voltage of Primary Electrons in SEM
- Practical Electron Microscopy and Database -
- An Online Book -  


This book (Practical Electron Microscopy and Database) is a reference for TEM and SEM students, operators, engineers, technicians, managers, and researchers.



Higher charge density induces higher Ebi values, and vice versa. For the case (c) in Figure 4464, the upper threshold value for the accelerating voltage is ~2 keV. Above this value, the dopant contrast disappears, as confirmed experimentally [1].







[1] Contribution of dynamic charging effects into dopant contrast mechanisms in silicon, Yuli Chakk, Dror Horvitz, J Mater Sci (2006) 41:4554–4560.



The book author (Yougui Liao) welcomes your comments, suggestions, and corrections, please click here for submission. If you let book author know once you have cited this book, the brief information of your publication will appear on the “Times Cited” page.