Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix
Based on the theory of ion channeling effect, certain orientations, typically those with low index directions aligned parallel to the ion beam direction, will allow the ions to penetrate more deeply because these crystal orientations allow the ions to travel with a lower probability of collision with the atoms in the substrate. As a result, the sputter yield from grains in channeling orientations is lower than for randomly orientated grains [1 - 4].
[1] Kempshaw, B.W., Schwarz, S.M., Prenitzer, B.I. & Giannuzzi, L.A. (2001). Ion channeling effects on the focused ion beam milling of Cu. J Vac Sci Technol B 19, 749–754.
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