The temperature rise of specimen during FIB deposition varies depending on specific conditions of the specimen structure and FIB settings, for instance:
i) The local rise of temperature during FIB deposition was experimentally investigated based on FIB fabricated thermocouple by Shukla et al . They concluded that the temperature rise mostly varied from 50 to 330 °C, depending on the thermal conductivity of the substrate.
ii) The temperature rise is from 142 °C at the interface of SiO2/Si substrate to 1000 °C at the top of the deposited Pt when Pt is being deposited on a ~200 nm thick SiO2 layer, and the temperature at the interface between the deposited Pt and SiO2 is about 350 °C. 
 Neeraj Shukla, Sarvesh K. Tripathi, Amit Banerjee, A. Sai Venkata Ramana, Nitul S. Rajput, Vishwas N. Kulkarni, Study of temperature rise during focused Ga ion beam irradiation using nanothermo-probe, Applied Surface Science 256 (2009) 475–479.
 Lee Knauss, ISTFA 2005 Proceedings of the 31st International Symposium for Testing and Failure Analysis November 6–10, 2005.