Chapter/Index: Introduction | A | B | C | D | E | F | G | H | I | J | K | L | M | N | O | P | Q | R | S | T | U | V | W | X | Y | Z | Appendix
| Tungsten hexacarbonyl {W(CO)6} precursor gases can be used for W deposition. The deposited film contains carbon and gallium elements because they exist in the precursor gas or the FIB beam (if a Ga source is used). The C and Ga concentrations are very high so that EDS and EELS can detect them. The EDS results showed that the FIB deposited tungsten structures deposited at optimum flux contain approximately 55% of W, 30% of Ga and 15% of C [1]. [1] S. K. Tripathi, N. Shukla, V.N. Kulkarni, Nucl. Instrum. Methods B 266 (2008) 1468.
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