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Table 4523. Precursor gases used to deposit materials in FIB.
| Deposited materials |
Precursor gases |
Beam ions |
Reference |
| Al |
Trimethyl aluminum (TMA) Al2(CH3)3 |
|
[2] |
| Trimethylamine alane (TMAA) |
|
[3] |
| Triethylamine alane (TEAA) |
|
[3] |
| Tri-isobutyl aluminum (TIBA), Al(C4H9)3 |
|
[4] |
| Au |
Dimethyl gold hexafluoro acetylacetonate C7H7O2F6Au |
|
[5, 6] |
C |
Naphthalene {C10H8}, or C14H10 |
Ga |
|
| Naphthalene (C10H8) |
|
[7] |
| Cu |
Cu(hfac)TMVS |
|
[8] |
Fe |
Iron pentacarbonyl {Fe(CO)5} |
Ga |
[1] |
SiO2 |
Si(OCH3)4 |
|
[9] |
Tetraethyl Orthosilicate {Si(OC2H5)4}, or C4H16Si4O4 |
Ga |
|
A combination of siloxane and oxygen gases |
|
[10] |
| Pd |
Palladium acetate [Pd(O2CCH3)2]3 |
|
[11] |
Pt |
(methylcyclopentadienyl) trimethyl platinum C9H16Pt |
|
[12, 13] |
Methyl cyclopentadienyl trimethyl platinum {(CH3)3Pt(CpCH3)}, C5H5Pt(CH3)3, or (CH3C5H4)(CH3)3Pt |
Ga |
|
W |
Tungsten hexacarbonyl {W(CO)6} |
Ga |
|
| Tungsten hexafluoride WF6 |
|
[14] |
| Tungsten hexafluoride, WF6 |
|
[15] |
| Insulator (TEOS) |
(C2H5)4Si |
|
[16] |
| Ta |
Pentaetoxy tantalum, Ta(OC2H5)5 |
|
[14] |
| PMTA, Ta(OC2H5)5 |
|
[14] |
The materials deposited in FIB normally contain impurities. For instance, FIB-deposited tungsten material can consist of approximately 80% W, 5% O, 5% C, and 10% Ga if W(CO)6 precursor and Ga beam are used.
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