Chapter/Index: Introduction | A |
B |
C |
D |
E |
F |
G |
H |
I |
J |
K |
L |
M |
N |
O |
P |
Q |
R |
S |
T |
U |
V |
W |
X |
Y |
Z |
Appendix
Silicide Properties
| Table 989. Silicide properties.
| Properties |
Details |
| Mechanical properties of silicides |
Room Temp. Fracture Toughness MPa. m1/2 |
| Optical properties of silicides |
Optical reflectivity (%) |
| Thermal properties of silicides |
Thermal expansion (ppm/°C)
Melting point (°C)
Thermal stability temperature: stable on Si up to (°C)
Stable on Al up to (°C)
Self-diffusion coefficient [cm2/s]
Diffusion coefficient in Si [cm2/s]
Dominant diffusing species
Temperature of zero lattice mismatch with Si
Coefficient of thermal expansion (CTE)
Enthalpy of
formation
(kJ/mol)
Eutectic temperature (°C) |
| Electrical properties of silicides |
Resistivity (µΩ-cm)
Sheet resistance for a 200-nm thick film (Ω/□)
Direct band gap (eV)
(Schottky) barrier height to n-Si (eV)
Indirect band gap (eV)
Barrier height on n-Si (mV)
Electromigration problems |
| Structures of silicides |
nm of Si consumed per nm of metal
nm of resulting silicide per nm of metal
Si consumption (nm Si/nm Silicide)
Impurity precipitates
Density gm/cm3
Silicides suitable for epitaxial growth on silicon
Space group
Structure
Lattice constant (nm)
Lattice mismatch with Si
Atomic/unit volume
Strain induced |
| Chemical properties of silicides |
Sintering/formation/growth temperature (°C)
Bonding energy (eV)
Lowest temperature at which aluminum interacts with silicide
(°C)
Maximum solubility of metal on Si [cm-3]
Selective etchant
Chemical resistance (etchability)
Molecular weight
Oxidation rate (oxidation
stability)
Etch rate in (10:1) BHF (Å/min)
Dry etching in plasma
Dry etching in RSE
Stability of the metal oxide
Oxidation stability of silicide on silicon
Oxidation stability of silicide on oxide |
|
