Electron microscopy
  
Shallow Trench Isolation (STI) Failure Mechanisms
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Table 4519a. Shallow trench isolation (STI) failure mechanisms of CMOS.

STI Test polarity Pin pair (stress/reference) Failure mechanism Failure location [1]
N+ diffusion diodes Positive VSS Silicide penetration, metallurgical junction, contacts Junction surface, Metallurgical junction edge, contact-to-silicon surface [1]
P+ diffusion diedes Positive VDD Silicon melting, TiSi2 salicide resistance, CoSi2 agglomeration, contact N-well under shallow tranch isolation, silicide surface [1]
N-well diodes Negative VSS Metallurgical junction failure   [1]
N-well to n-well Negative Well-to-well Molten silicon Shallow trench isolation between wells [1]
N-channel MOSFET Positive Drain-to-source MOSFET second breakdown Molten silicon, MOSFET channel region [1]
Positive Gate Gate dielectric failure MOSFET gate [1]
P-channel MOSFET Negative Drain-to-source MOSFET second breakdown Molten silicon, MOSFET channel region [1]
Negative

MOSFET gate Gate dielectric failure MOSFET gate [1]
N-well resistors     Resistor second breakdown Resistor metallurgical junction, contacts [1]
N-well ballasted Positive Drain-to-source MOSFET second breakdown Molten silicon [1]
N-channel MOSFET Positive
 Gate Gate dielectric failure MOSFET channel region and gate [1]
Aluminum wire interconnect Positive   Aluminum melting Aluminum film [1]
Negative   Dielectric cracking Aluminum-ILD interface [1]
Tungsten first level Positive Signal pin ILD (inter-layer-dielectric) breakdown Tungsten film-to-polysilicon fill shape, ILD [1]
Tungsten stud contact     Tungsten melting Tungsten film, silicon surface [1]
Tungsten stud bar contact Positive   Tungsten melting Tungsten film [1]
Negative     Silicon surface [1]
Copper interconnect Positive   Copper melting Copper film [1]
Negative   Dielectric cracking Cracking at the Cu-ILD top surface [1]
Copper via Positive   Copper melting Copper film [1]
Negative     Cracking at the Cu-ILD top surface [1]
Copper dual damascene Positive   Copper film and via Displacement of Cu film and via [1]

Table 4519b. Poly stringer defects, having three forms. Shallow trench isolation: STI.

  STI seams STI heights STI divots
Diagram [2] STI seams STI seams STI seams
Origin

Layout dependent, mainly due to the STI width to STI depth ratio (i.e., the aspect ratio)

STI chemical mechanical polishing (CMP) processes for different STIs and different active densities [3]

Wet dip process after the STI CMP but before the poly deposition.
More complicated

Processing conditions such as STI trench etching profiles, gap filling, and poly etching.

    
Caused failure     Causes two poly lines to be short

 

         
         
         
         
         
         


         
         
         
         
         
         
         
         
         
         
         
         

 

 

 

 

 

 

 

 

 

 

 

 


[1] Steven H. Voldman, ESD: Failure Mechanisms and Models, 2009.
[2] HU Xiong, PAN Weiwei, SHI Zheng, YAN Xiaolang, MA Tiezhong, Testing Structure for Detection of Poly Stringer Defects in CMOS ICs, TSINGHUA SCIENCE AND TECHNOLOGY, ISSNll1007-0214ll15/17llpp347-351, 15(3), 2010.
[3] Kuei J, Weng Y L. Yield impact from physical design at advanced technology nodes. In: Proceedings of the 7th IEEE International Conference on ASIC (ASICON). Shanghai, China, 2007: 1104-1109.

         
         
         
         
         
         
         
         
         
         
         
         
         
         
         
         
         
         

 

 

 

 

 

 

 

 

 

 
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