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Properties of Silicon
- Integrated Circuits -
- An Online Book - |
| Integrated Circuits http://www.globalsino.com/ICs/ |
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| ================================================================================= |
Table 4785. Properties of silicon.
Properties |
0 K |
300 k |
Atoms (cm-3) |
|
5.02 x 1022 |
Atomic weight |
28.09 |
Density (gm/cm3) |
|
2.329 |
Crystal Structure |
|
Diamond |
Lattice constant (nm) |
|
0.5431 |
Band gap (eV) |
1.17 |
1.121 |
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Melting point (K) |
1685 |
Specific heat (J/g°C) |
0.7 |
Dissociation Pressure (Atm) |
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Thermal expansion coefficient
(10-6 °C-1) |
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2.33-2.59 |
Thermal conductivity (W/cmK) |
|
1.31 |
Direct band gap (eV) |
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Indirect band gap (eV) |
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1.12 |
Breakdown field (V/cm) |
|
~3 x 105 |
Dielectric constant |
|
11.9 |
Electron affinity qχ (eV) |
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4.03 |
Electron mobility (cm2/V-s) |
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1350-1500 |
Hole mobility (cm2/V-s) |
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450 |
Minority carrier lifetime (µs): Electrons (p-type) |
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800 |
Minority carrier lifetime (µs): Holes (n-type) |
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1000 |
εs/ε0 |
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Intrinsic carrier concentration (cm-3) |
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9.65 x 109 |
Intrinsic resistivity (Ωcm) |
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3.3 x 105 |
Effective density of states in conduction band (cm-3) |
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2.86 x 1019 |
Effective density of states in valence band (cm-3) |
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2.66 x 1019 |
Density of states electron effective mass |
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1.08 m0 |
Effective mass of electron (mh/m0) |
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0.26 |
Longitudinal electron effective mass |
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0.98 |
Transverse electron effective mass |
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0.19 |
Effective mass of hole (mh/m0) |
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0.19 |
Heavy hole effective mass |
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0.49 m0 |
Light hole effective mass |
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0.16 m0 |
Density of states hole effective mass |
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0.55 m0 |
Transport hole effective mass |
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0.37 m0 |
Optical phonon energy (eV) |
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0.063 |
Index of refraction |
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3.42 |
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