Electron microscopy
  
Various MOSFET Structures
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Figure 4861 shows a MOSFET structure with a vertical channel. In this structure, the gate structure locates in the silicon (Si) trenches, and a trench MOSFET structure with double polysilicon and tungsten plug at the source contact. The electrically conductive layers in the gates, and drain and source contacts are TiN/Ti(TiSix) metal layers.

Trench MOS structure
Trench MOSFET structure with double polysilicon and Tungsten plug at the Source contact
(a)
(b)
Figure 4861. (a) Trench MOS structure and corresponding flow path for the majority carrier when the device is turned on, that is, by applying voltage to the gate, and (b) Trench MOSFET structure with double polysilicon and Tungsten plug at the Source contact. [1]

 

 

 

 

 

 

 

 

 

 

 

[1] Rebecca Burgin, “Construction Analysis of Trench 3”, LIMS Report #15770, 2008 pp. 18.

 

 
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